| Manipulating the mixed‐perovskite crystallization pathway unveiled by in situ GIWAXS M Qin, K Tse, TK Lau, Y Li, CJ Su, G Yang, J Chen, J Zhu, US Jeng, G Li, ... Advanced Materials 31 (25), 1901284, 2019 | 147 | 2019 |
| New approaches for calculating absolute surface energies of wurtzite (0001)/(0001): A study of ZnO and GaN J Zhang, Y Zhang, K Tse, B Deng, H Xu, J Zhu Journal of Applied Physics 119 (20), 2016 | 48 | 2016 |
| Induced effects by the substitution of Zn in Cu 2ZnSnX4 (X= S and Se) G Zhong, K Tse, Y Zhang, X Li, L Huang, C Yang, J Zhu, Z Zeng, Z Zhang, ... Thin Solid Films 603, 224-229, 2016 | 47 | 2016 |
| Pseudo-Hydrogen Passivation: A Novel Way to Calculate Absolute Surface Energy of Zinc Blende (111)/(͞1 ͞1 ͞1) Surface Y Zhang, J Zhang, K Tse, L Wong, C Chan, B Deng, J Zhu Scientific reports 6 (1), 20055, 2016 | 33 | 2016 |
| Controlling defects and secondary phases of CZTS by surfactant potassium Y Zhang, K Tse, X Xiao, J Zhu Physical Review Materials 1 (4), 045403, 2017 | 28 | 2017 |
| Extremely large magnetoresistance and the complete determination of the Fermi surface topology in the semimetal ScSb YJ Hu, EIP Aulestia, KF Tse, CN Kuo, JY Zhu, CS Lue, KT Lai, SK Goh Physical Review B 98 (3), 035133, 2018 | 21 | 2018 |
| Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate J Zhang, Y Zhang, K Tse, J Zhu Physical Review Materials 2 (1), 013403, 2018 | 16 | 2018 |
| Defect properties of Na and K in Cu2ZnSnS4 from hybrid functional calculation K Tse, M Wong, Y Zhang, J Zhang, M Scarpulla, J Zhu Journal of Applied Physics 124 (16), 2018 | 15 | 2018 |
| Towards understanding the special stability of and SC Tsang, J Zhang, K Tse, J Zhu Physical Review Materials 3 (2), 024603, 2019 | 14 | 2019 |
| New types of CZTS Σ3 {112} grain boundaries: algorithms to passivation M Wong, K Tse, J Zhu The Journal of Physical Chemistry C 122 (14), 7759-7770, 2018 | 13 | 2018 |
| A brief review of formation energies calculation of surfaces and edges in semiconductors CK Sin, J Zhang, K Tse, J Zhu Journal of Semiconductors 41 (6), 061101, 2020 | 11 | 2020 |
| Stepping Stone Mechanism: Carrier-Free Long-Range Magnetism Mediated by Magnetized Cation States in Quintuple Layer C Chan, X Zhang, Y Zhang, K Tse, B Deng, J Zhang, J Zhu Chinese Physics Letters 35 (1), 017502, 2018 | 9 | 2018 |
| Surface energy calculations from Zinc blende (111)/(-1-1-1) to Wurtzite (0001)/(000-1): a study of ZnO and GaN J Zhang, Y Zhang, K Tse, B Deng, H Xu, J Zhu arXiv preprint arXiv:1510.08961, 2015 | 6 | 2015 |
| Defect calculations using a combined SCAN and hybrid functional in γ-CsPbI 3 S Wang, KF Tse, A Boyko, J Zhu Physical Chemistry Chemical Physics 24 (5), 3420-3428, 2022 | 4 | 2022 |
| Twist-driven separation of p-type and n-type dopants in single-crystalline nanowires DB Zhang, XJ Zhao, G Seifert, K Tse, J Zhu National Science Review 6 (3), 532-539, 2019 | 4 | 2019 |
| Step Stone Effect: A sp anti-bonding Mediated Long-Range Ferromagnetism in Cr-doped Carrier-Free Bi2Te3 C Chan, X Zhang, Y Zhang, K Tse, B Deng, J Zhang, J Zhu arXiv preprint arXiv:1701.04943, 2017 | 4 | 2017 |
| Defects properties and vacancy diffusion in Cu2MgSnS4 KF Tse, S Wang, MH Wong, J Zhu Journal of Semiconductors 43 (2), 022101, 2022 | 3 | 2022 |
| Kinetic Processes and Surfactant Design of Group I Elements on the CZTS (1̅1̅2̅) Surface K Bao, H Liu, K Tse, C Yang, G Zhong, J Zhu The Journal of Physical Chemistry C 125 (1), 376-384, 2020 | 3 | 2020 |
| Long-range magnetic order stabilized by acceptors X Zhang, J Zhang, K Tse, S Zhang, J Zhu Physical Review B 99 (13), 134435, 2019 | 3 | 2019 |
| Machine-Learning-Assisted Acceleration on High-Symmetry Materials Search: Space Group Predictions from Band Structures B Xi, KF Tse, TF Kok, HM Chan, MK Chan, HY Chan, KY Clinton Wong, ... The Journal of Physical Chemistry C 126 (29), 12264-12273, 2022 | 2 | 2022 |
