| In-situ and ex-situ face-to-face annealing of epitaxial AlN MN Koçak, KM Pürlü, İ Perkitel, İ Altuntaş, İ Demir Vacuum 203, 111284, 2022 | 8 | 2022 |
| Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE KM Pürlü, MN Kocak, G Yolcu, I Perkitel, İ Altuntaş, I Demir Materials Science in Semiconductor Processing 142, 106464, 2022 | 8 | 2022 |
| The effect of Si (111) substrate surface cleaning on growth rate and crystal quality of MOVPE grown AlN I Perkitel, I Altuntas, I Demir Gazi University Journal of Science 35 (1), 281-291, 2022 | 8 | 2022 |
| Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE I Perkitel, R Kekül, I Altuntas, E Gür, I Demir Journal of Electronic Materials 52 (9), 6042-6051, 2023 | | 2023 |
| Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE I Perkitel, I Demir Journal of Molecular Structure 1272, 134203, 2023 | | 2023 |
| Gunn Oscillations in n-type InGaAs Epilayer Structures G Kalyon, İ Demir, İ Perkitel, S Mutlu, A Erol | | 2022 |
| Gunn Effect in InGaAs Epilayer Structures S Mutlu, A Erol, İ Perkitel, İ Demir, G Kalyon | | |
| Journal of Science I PERKITEL, I ALTUNTAS, I DEMIR | | |
| Optical and electrical characterızatıon of InGaAs epitaxial layers S Amını, G Kalyon, S Mutlu, I Perkıtel, İ Demir, A Erol | | |
| Fabrication and Characterisation of InGaAs Gunn Diode-Based Light Emitting Device G Kalyon, S Mutlu, I Perkıtel, İ Demir, A Erol | | |
