| Wide-bandgap semiconductor ultraviolet photodetectors E Monroy, F Omnes, F Calle Semiconductor science and technology 18, R33, 2003 | 1186 | 2003 |
| The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN-and AlN-layers grown by molecular beam epitaxy on Si(111) MA Sanchez-Garcia, E Calleja, E Monroy, FJ Sanchez, F Calle, E Munoz, ... Journal of crystal growth 183 (1), 23-30, 1998 | 370 | 1998 |
| III nitrides and UV detection E Munoz, E Monroy, JL Pau, F Calle, F Omnes, P Gibart Journal of Physics: Condensed Matter 13, 7115, 2001 | 312 | 2001 |
| Systematic experimental and theoretical investigation of intersubband absorption in GaN∕ AlN quantum wells M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ... Physical Review B 73 (12), 125347, 2006 | 293 | 2006 |
| High-performance GaN pn junction photodetectors for solar ultraviolet applications E Monroy, E Munoz, FJ Sánchez, F Calle, E Calleja, B Beaumont, P Gibart, ... Semiconductor science and technology 13, 1042, 1998 | 229 | 1998 |
| Growth of III-nitrides on Si (1 1 1) by molecular beam epitaxy Doping, optical, and electrical properties E Calleja, MA Sánchez-Garcý́a, FJ Sanchez, F Calle, FB Naranjo, ... Journal of crystal growth 201, 296-317, 1999 | 222 | 1999 |
| High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN D Walker, E Monroy, P Kung, J Wu, M Hamilton, FJ Sanchez, J Diaz, ... Applied physics letters 74, 762, 1999 | 220 | 1999 |
| GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ... Journal of Applied Physics 104 (9), 093501, 2008 | 204 | 2008 |
| High-quality visible-blind AlGaN pin photodiodes E Monroy, M Hamilton, D Walker, P Kung, FJ Sánchez, M Razeghi Applied physics letters 74, 1171, 1999 | 197 | 1999 |
| Photoconductor gain mechanisms in GaN ultraviolet detectors E Munoz, E Monroy, JA Garrido, I Izpura, FJ Sanchez, ... Applied physics letters 71, 870, 1997 | 180 | 1997 |
| Photoconductive gain modelling of GaN photodetectors JA Garrido, E Monroy, I Izpura, E Munoz Semiconductor science and technology 13, 563, 1998 | 164 | 1998 |
| AlGaN-based UV photodetectors E Monroy, F Calle, JL Pau, E Munoz, F Omnes, B Beaumont, P Gibart Journal of crystal growth 230 (3), 537-543, 2001 | 162 | 2001 |
| III-nitride semiconductors for intersubband optoelectronics: a review M Beeler, E Trichas, E Monroy Semiconductor Science and Technology 28 (7), 074022, 2013 | 160 | 2013 |
| AlGaN metal–semiconductor–metal photodiodes E Monroy, F Calle, E Munoz, F Omnes Applied physics letters 74, 3401, 1999 | 156 | 1999 |
| Room-Temperature Photodetection Dynamics of Single GaN Nanowires F González-Posada, R Songmuang, M Den Hertog, E Monroy Nano Letters 12 (1), 172-176, 2012 | 145 | 2012 |
| Near infrared quantum cascade detector in GaN/AlGaN/AlN heterostructures A Vardi, G Bahir, F Guillot, C Bougerol, E Monroy, SE Schacham, ... Applied Physics Letters 92 (1), 011112, 2008 | 140 | 2008 |
| Analysis and modeling of AlGaN-based Schottky barrier photodiodes E Monroy, F Calle, JL Pau, FJ Sanchez, E Munoz, F Omnes, B Beaumont, ... Journal of Applied Physics 88, 2081, 2000 | 140 | 2000 |
| Intrinsic ferromagnetism in wurtzite (Ga, Mn) N semiconductor E Sarigiannidou, F Wilhelm, E Monroy, RM Galera, E Bellet-Amalric, ... Physical Review B 74 (4), 041306, 2006 | 136 | 2006 |
| Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN N Gogneau, D Jalabert, E Monroy, T Shibata, M Tanaka, B Daudin Journal of applied physics 94, 2254, 2003 | 119 | 2003 |
| Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy A Helman, M Tchernycheva, A Lusson, E Warde, FH Julien, K Moumanis, ... Applied physics letters 83, 5196, 2003 | 115 | 2003 |
Fernando CalleUPMVerified email at upm.es
