| InP Schottky junctions for zero bias detector diodes ZJ Horvath, V Rakovics, B Szentpali, S Püspöki, K Žd’ánský Vacuum 71 (1-2), 113-116, 2003 | 63 | 2003 |
| Control of electro-osmostic flow by light L Oroszi, A Dér, H Kirei, P Ormos, V Rakovics Applied physics letters 89 (26), 2006 | 35 | 2006 |
| Experimental determination of the inelastic mean free path of electrons in GaP and InAs G Gergely, M Menyhard, S Gurban, Z Benedek, C Daroczi, V Rakovics, ... Surface and Interface Analysis: An International Journal devoted to the …, 2000 | 21 | 2000 |
| Spectral characteristics of InGaAsP/InP infrared emitting diodes grown by LPE V Rakovics, S Püspöki, J Balázs, I Réti, C Frigeri Materials Science and Engineering: B 91, 491-494, 2002 | 20 | 2002 |
| Liquid phase epitaxy growth and characterization of Ga1− xInxAsySb1− y quaternary alloys V Rakovics, AL Tóth, B Podör, C Frigeri, J Balázs, ZE Horváth Materials Science and Engineering: B 91, 83-86, 2002 | 17 | 2002 |
| Schottky junctions on n‐type InP for zero bias microwave detectors ZJ Horváth, V Rakovics, B Szentpáli, S Püspöki physica status solidi (c), 916-921, 2003 | 15 | 2003 |
| Influence of LPE growth conditions on the electroluminescence properties of InP/InGaAs (P) infrared emitting diodes V Rakovics, J Balázs, S Püspöki, C Frigeri Materials Science and Engineering: B 80 (1-3), 18-22, 2001 | 15 | 2001 |
| LPE growth of GaAs-GaAlAs superlattices E Lendvay, T Görög, V Rakovics Journal of crystal growth 72 (3), 616-620, 1985 | 14 | 1985 |
| Schottky contacts to InP ZJ Horváth, E Ayyildiz, V Rakovics, H Cetin, B Põdör physica status solidi (c) 2 (4), 1423-1427, 2005 | 12 | 2005 |
| Manipulation of microfluidic flow pattern by optically controlled electroosmosis L Oroszi, A Dér, H Kirei, V Rakovics, P Ormos Microfluidics and nanofluidics 6, 565-569, 2009 | 11 | 2009 |
| Chemical bath deposition of nanocrystaline CdS and CdPbS layers and investigation of their photoconductivity V Rakovics MRS Online Proceedings Library (OPL) 900, 0900-O03-30, 2005 | 9 | 2005 |
| Near‐infrared transmission measurements on InGaAsP/InP LED wafers V Rakovics, J Balázs, I Réti, S Püspöki, Z Lábadi physica status solidi (c), 956-960, 2003 | 7 | 2003 |
| High power InP/InGaAsP buried heterostructure laser for a wavelength of 1.15 μm V Rakovics, M Serényi, F Koltai, S Püspöki, Z Lábadi Materials Science and Engineering: B 28 (1-3), 296-298, 1994 | 7 | 1994 |
| Nanostruktúrás LED-ek I Réti, A Ürmös, J Nádas, V Rakovics ELEKTRONIKA 11, 19-23, 2014 | 6 | 2014 |
| Laser diode pump sources for blue up-conversion fibre laser S Püspöki, V Rakovics, F Koltai, G Nagy, M Serényi Semiconductor science and technology 11 (10), 1468, 1996 | 6 | 1996 |
| High intensity broad spectrum LEDs in the near infrared range J Nádas, V Rakovics Materials Science Forum 885, 141-146, 2017 | 5 | 2017 |
| Chemical bath deposition of CdS and CdPbS nanocrystalline thin films and investigation of their photoconductivity V Rakovics 2005 MRS Fall Meeting 27, 87-91, 2006 | 5 | 2006 |
| Al/a‐SiGe: H/c‐Si m–i–p diodes–a new type of heterodevices ZJ Horváth, M Serényi, M Ádám, I Szabó, E Badalján, V Rakovics physica status solidi (c), 1066-1069, 2003 | 5 | 2003 |
| Infravörös diódák alkalmazása az élelmiszerek spektroszkópiai vizsgálatára V Rakovics, I Réti Müszaki Kémiai Napok'‘08, 64-68, 0 | 4 | |
| Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures ZJ Horváth, LK Orlov, V Rakovics, NL Ivina, AL Tóth, ES Demidov, F Riesz, ... The European Physical Journal Applied Physics 27 (1-3), 189-192, 2004 | 3 | 2004 |
András DérInstitute of Biophysics, Biological Research Centre, Szeged, HungaryVerified email at brc.hu
