Yuewei Zhang
Yuewei Zhang
Verified email at ucsb.edu - Homepage
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Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 173502, 2018
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 023502, 2017
MOCVD grown epitaxial -Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
Y Zhang, F Alema, A Mauze, OS Koksaldi, R Miller, A Osinsky, JS Speck
APL Materials 7 (2), 022506, 2019
Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan
Applied physics letters 112 (23), 233503, 2018
Polarity governs atomic interaction through two-dimensional materials
W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ...
Nature materials 17 (11), 999-1004, 2018
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes
C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ...
Applied Physics Express 11 (3), 031101, 2018
Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts
Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ...
IEEE Electron Device Letters 39 (4), 568-571, 2018
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ...
Applied Physics Letters 106 (14), 141103, 2015
Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate
JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
AlGaN channel field effect transistors with graded heterostructure ohmic contacts
S Bajaj, F Akyol, S Krishnamoorthy, Y Zhang, S Rajan
Applied Physics Letters 109 (13), 133508, 2016
Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance
F Akyol, S Krishnamoorthy, Y Zhang, J Johnson, J Hwang, S Rajan
Applied Physics Letters 108 (13), 131103, 2016
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
Y Zhang, S Krishnamoorthy, F Akyol, S Bajaj, AA Allerman, MW Moseley, ...
Applied Physics Letters 110 (20), 201102, 2017
Temperature-controlled epitaxy of InxGa1-xN alloys and their band gap bowing
ST Liu, XQ Wang, G Chen, YW Zhang, L Feng, CC Huang, FJ Xu, N Tang, ...
Journal of Applied Physics 110 (11), 113514, 2011
High current density 2D/3D MoS2/GaN Esaki tunnel diodes
S Krishnamoorthy, EW Lee, CH Lee, Y Zhang, WD McCulloch, ...
Applied Physics Letters 109 (18), 183505, 2016
High Al-content AlGaN transistor with 0.5 A/mm current density and lateral breakdown field exceeding 3.6 MV/cm
S Bajaj, A Allerman, A Armstrong, T Razzak, V Talesara, W Sun, SH Sohel, ...
IEEE Electron Device Letters 39 (2), 256-259, 2017
Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions
Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ...
Applied Physics Letters 109 (12), 121102, 2016
Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019
GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions
F Akyol, S Krishnamoorthy, Y Zhang, S Rajan
Applied Physics Express 8 (8), 082103, 2015
Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film
F Alema, B Hertog, P Mukhopadhyay, Y Zhang, A Mauze, A Osinsky, ...
APL Materials 7 (2), 022527, 2019
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ...
Applied Physics Letters 112 (7), 071107, 2018
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