| Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes XA Cao, EB Stokes, PM Sandvik, SF LeBoeuf, J Kretchmer, D Walker IEEE Electron Device Letters 23 (9), 535-537, 2002 | 283 | 2002 |
| Gallium nitride crystals and wafers and method of making MP D'evelyn, DS Park, SF Leboeuf, LB Rowland, KJ Narang, H Hong, ... US Patent 7,078,731, 2006 | 252 | 2006 |
| Faceted structure, article, sensor device, and method S LeBoeuf, P Sandvik, R Potyrailo US Patent App. 11/480,185, 2007 | 237 | 2007 |
| Solar-blind AlGaN photodiodes with very low cutoff wavelength D Walker, V Kumar, K Mi, P Sandvik, P Kung, XH Zhang, M Razeghi Applied Physics Letters 76 (4), 403-405, 2000 | 222 | 2000 |
| Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses XA Cao, PM Sandvik, SF LeBoeuf, SD Arthur Microelectronics Reliability 43 (12), 1987-1991, 2003 | 200 | 2003 |
| Flip-chip light emitting diode EB Stokes, MP D'evelyn, SE Weaver, PM Sandvik, AU Ebong, XA Cao, ... US Patent 7,119,372, 2006 | 165 | 2006 |
| AlxGa1− xN for solar-blind UV detectors P Sandvik, K Mi, F Shahedipour, R McClintock, A Yasan, P Kung, ... Journal of crystal growth 231 (3), 366-370, 2001 | 136 | 2001 |
| Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same A Alizadeh, P Sharma, SF Leboeuf, S Ganti, MP D'evelyn, KR Conway, ... US Patent 7,122,827, 2006 | 132 | 2006 |
| Gallium nitride crystal and method of making same MP D'evelyn, DS Park, S LeBoeuf, L Rowland, K Narang, H Hong, ... US Patent 7,098,487, 2006 | 130 | 2006 |
| Gallium nitride crystals and wafers and method of making MP D'evelyn, D Park, SF Leboeuf, LB Rowland, KJ Narang, H Hong, ... US Patent 7,786,503, 2010 | 118 | 2010 |
| Impact ionization coefficients in 4H-SiC WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ... IEEE Transactions on electron devices 55 (8), 1984-1990, 2008 | 106 | 2008 |
| Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes X Guo, LB Rowland, GT Dunne, JA Fronheiser, PM Sandvik, AL Beck, ... IEEE photonics technology letters 18 (1), 136-138, 2005 | 100 | 2005 |
| Pt/GaN Schottky diodes for hydrogen gas sensors M Ali, V Cimalla, V Lebedev, H Romanus, V Tilak, D Merfeld, P Sandvik, ... Sensors and Actuators B: Chemical 113 (2), 797-804, 2006 | 96 | 2006 |
| Crystalline composition, wafer, and semi-conductor structure MP D'evelyn, DS Park, SF Leboeuf, LB Rowland, KJ Narang, H Hong, ... US Patent 7,638,815, 2009 | 86 | 2009 |
| Deep UV photon-counting detectors and applications GA Shaw, AM Siegel, J Model, A Geboff, S Soloviev, A Vert, P Sandvik Advanced Photon Counting Techniques III 7320, 88-102, 2009 | 83 | 2009 |
| Gas sensor device PM Sandvik, V Tilak, J Tucker, SE Weaver, DM Shaddock, JL Male, ... US Patent 7,053,425, 2006 | 80 | 2006 |
| Integrated devices with optical and electrical isolation and method for making JW Kretchmer, JB Fedison, DM Brown, PM Sandvik US Patent 7,285,433, 2007 | 74 | 2007 |
| Electrical and optical modeling of 4H-SiC avalanche photodiodes HY Cha, PM Sandvik Japanese Journal of Applied Physics 47 (7R), 5423, 2008 | 70 | 2008 |
| Detection apparatus and associated method SF Leboeuf, PM Sandvik, RA Potyrailo US Patent 8,425,858, 2013 | 67 | 2013 |
| High temperature Hall effect sensors based on AlGaN∕ GaN heterojunctions H Lu, P Sandvik, A Vertiatchikh, J Tucker, A Elasser Journal of applied physics 99 (11), 2006 | 63 | 2006 |
Stanislav SolovievIdeal Semiconductor Devices, Inc.Verified email at idealsemi.com
