Stephen W. Kaun
Stephen W. Kaun
Apeel Sciences
Verified email at apeelsciences.com
Title
Cited by
Cited by
Year
Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
E Ahmadi, OS Koksaldi, SW Kaun, Y Oshima, DB Short, UK Mishra, ...
Applied Physics Express 10 (4), 041102, 2017
1422017
β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy
SW Kaun, F Wu, JS Speck
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 (4 …, 2015
1252015
Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
DW Cardwell, A Sasikumar, AR Arehart, SW Kaun, J Lu, S Keller, ...
Applied Physics Letters 102 (19), 193509, 2013
892013
Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors
F Gao, B Lu, L Li, S Kaun, JS Speck, CV Thompson, T Palacios
Applied Physics Letters 99 (22), 223506, 2011
862011
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
ECH Kyle, SW Kaun, PG Burke, F Wu, YR Wu, JS Speck
Journal of applied physics 115 (19), 193702, 2014
852014
Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs
J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013
832013
Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
M Ťapajna, SW Kaun, MH Wong, F Gao, T Palacios, UK Mishra, JS Speck, ...
Applied Physics Letters 99 (22), 223501, 2011
762011
Molecular beam epitaxy for high-performance Ga-face GaN electron devices
SW Kaun, MH Wong, UK Mishra, JS Speck
Semiconductor science and technology 28 (7), 074001, 2013
752013
Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors
SW Kaun, MH Wong, S Dasgupta, S Choi, R Chung, UK Mishra, JS Speck
Applied physics express 4 (2), 024101, 2011
752011
Chlorine-based dry etching of β-Ga2O3
JE Hogan, SW Kaun, E Ahmadi, Y Oshima, JS Speck
Semiconductor Science and Technology 31 (6), 065006, 2016
662016
Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
SW Kaun, PG Burke, M Hoi Wong, ECH Kyle, UK Mishra, JS Speck
Applied Physics Letters 101 (26), 262102, 2012
652012
Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures
B Mazumder, SW Kaun, J Lu, S Keller, UK Mishra, JS Speck
Applied Physics Letters 102 (11), 111603, 2013
642013
GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy
SW Kaun, E Ahmadi, B Mazumder, F Wu, ECH Kyle, PG Burke, UK Mishra, ...
Semiconductor Science and Technology 29 (4), 045011, 2014
512014
Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
SW Kaun, MH Wong, UK Mishra, JS Speck
Applied Physics Letters 100 (26), 262102, 2012
392012
Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN
ECH Kyle, SW Kaun, EC Young, JS Speck
Applied Physics Letters 106 (22), 222103, 2015
372015
Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers
C Hodges, N Killat, SW Kaun, MH Wong, F Gao, T Palacios, UK Mishra, ...
Applied Physics Letters 100 (11), 112106, 2012
352012
Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy
SW Kaun, B Mazumder, MN Fireman, ECH Kyle, UK Mishra, JS Speck
Semiconductor Science and Technology 30 (5), 055010, 2015
342015
Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy
Y Oshima, E Ahmadi, S Kaun, F Wu, JS Speck
Semiconductor Science and Technology 33 (1), 015013, 2017
302017
Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs
R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ...
IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018
282018
Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs
R Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ...
IEEE Transactions on Nuclear Science 64 (1), 218-225, 2016
282016
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