Yusung Kim
Yusung Kim
Verified email at intel.com
Title
Cited by
Cited by
Year
Spin-transfer torque devices for logic and memory: Prospects and perspectives
X Fong, Y Kim, K Yogendra, D Fan, A Sengupta, A Raghunathan, K Roy
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2015
1262015
Magnetic tunnel junction mimics stochastic cortical spiking neurons
A Sengupta, P Panda, P Wijesinghe, Y Kim, K Roy
Scientific reports 6, 30039, 2016
862016
Spin-transfer torque memories: Devices, circuits, and systems
X Fong, Y Kim, R Venkatesan, SH Choday, A Raghunathan, K Roy
Proceedings of the IEEE 104 (7), 1449-1488, 2016
762016
Write-optimized reliable design of STT MRAM
Y Kim, SK Gupta, SP Park, G Panagopoulos, K Roy
Proceedings of the 2012 ACM/IEEE international symposium on Low power …, 2012
722012
Failure Mitigation Techniques for 1T-1MTJ Spin-Transfer Torque MRAM Bit-cells
X Fong, Y Kim, SH Choday, K Roy
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on 22 (2 …, 2014
682014
Multilevel spin-orbit torque MRAMs
Y Kim, X Fong, KW Kwon, MC Chen, K Roy
IEEE Transactions on Electron Devices 62 (2), 561-568, 2014
552014
DSH-MRAM: Differential Spin Hall MRAM for On-Chip Memories
Y Kim, SH Choday, K Roy
Electron Device Letters, IEEE 34 (10), 1259-1261, 2013
532013
SHE-NVFF: Spin Hall effect-based nonvolatile flip-flop for power gating architecture
KW Kwon, SH Choday, Y Kim, X Fong, SP Park, K Roy
IEEE Electron Device Letters 35 (4), 488-490, 2014
522014
Spin orbit torque based electronic neuron
A Sengupta, SH Choday, Y Kim, K Roy
Applied Physics Letters 106 (14), 143701, 2015
512015
AWARE (asymmetric write architecture with redundant blocks): A high write speed STT-MRAM cache architecture
KW Kwon, SH Choday, Y Kim, K Roy
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22 (4), 712-720, 2013
462013
Exploring spin transfer torque devices for unconventional computing
K Roy, D Fan, X Fong, Y Kim, M Sharad, S Paul, S Chatterjee, S Bhunia, ...
IEEE journal on Emerging and Selected Topics in Circuits and Systems 5 (1), 5-16, 2015
252015
Spin-orbit-torque-based spin-dice: A true random-number generator
Y Kim, X Fong, K Roy
IEEE Magnetics Letters 6, 1-4, 2015
202015
Domino-style spin–orbit torque-based spin logic
MC Chen, Y Kim, K Yogendra, K Roy
IEEE Magnetics Letters 6, 1-4, 2015
72015
A physics-based statistical model for reliability of STT-MRAM considering oxide variability
CH Ho, GD Panagopoulos, SY Kim, Y Kim, D Lee, K Roy
2013 International Conference on Simulation of Semiconductor Processes and …, 2013
52013
A physical model to predict STT-MRAM performance degradation induced by TDDB
CH Ho, GD Panagopoulos, SY Kim, Y Kim, D Lee, K Roy
71st Device Research Conference, 59-60, 2013
52013
Spin orbit torque based electronic neuron
A Sengupta, SH Choday, KIM Yusung, K Roy
US Patent App. 15/445,906, 2017
32017
Corrigendum: Magnetic tunnel junction mimics stochastic cortical spiking neurons
A Sengupta, P Panda, P Wijesinghe, Y Kim, K Roy
Scientific reports 7, 46894, 2017
22017
Magnetic Tunnel Junction Mimics Stochastic Cortical Spiking Neurons (vol 6, 30039, 2016)
A Sengupta, P Panda, P Wijesinghe, Y Kim, K Roy
SCIENTIFIC REPORTS 7, 2017
2017
Design of nonvolatile on-chip memory using spin torque devices
Y Kim
Purdue University, 2015
2015
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