| Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs (1 1 0) schottky barrier diodes Y Şafak-Asar, T Asar, Ş Altındal, S Özçelik Journal of Alloys and Compounds 628, 442-449, 2015 | 105 | 2015 |
| Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures E Arslan, Y Şafak, Ş Altındal, Ö Kelekçi, E Özbay Journal of non-crystalline solids 356 (20-22), 1006-1011, 2010 | 81 | 2010 |
| Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics Ö Vural, Y Şafak, A Türüt, Ş Altındal Journal of Alloys and Compounds 513, 107-111, 2012 | 71 | 2012 |
| Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range Ö Vural, Y Şafak, Ş Altındal, A Türüt Current Applied Physics 10 (3), 761-765, 2010 | 70 | 2010 |
| Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures E Arslan, S Bütün, Y Şafak, H Uslu, İ Taşçıoğlu, Ş Altındal, E Özbay Microelectronics Reliability 51 (2), 370-375, 2011 | 52 | 2011 |
| Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs (110) MIS structures Y Şafak Asar, T Asar, Ş Altındal, S Özçelik Philosophical Magazine 95 (26), 2885-2898, 2015 | 41 | 2015 |
| Investigation of trap states in AlInN/AlN/GaN heterostructures by frequency-dependent admittance analysis E Arslan, S Bütün, Y Şafak, E Ozbay Journal of electronic materials 39 (12), 2681-2686, 2010 | 37 | 2010 |
| Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures E Arslan, Y Şafak, İ Taşçıoğlu, H Uslu, E Özbay Microelectronic engineering 87 (10), 1997-2001, 2010 | 35 | 2010 |
| On the voltage and frequency distribution of dielectric properties and ac electrical conductivity in Al/SiO2/p-Si (MOS) Capacitors AK Ş Altındal, Y Şafak Asar, Z Sönmez Chinese Physcis Letters 30 (1), 017301, 2013 | 30* | 2013 |
| On the energy distribution of interface states and their relaxation time profiles in Al/pentacene/p-GaAs heterojunction diode Y Şafak, M Soylu, F Yakuphanoğlu, Ş Altındal Journal of Applied Physics 111 (3), 2012 | 18 | 2012 |
| Effects of illumination on IV, CV and G/wV characteristics of Au/n-CdTe Schottky barrier diodes H Kanbur, Ş Altindal, T Mammadov, Y Şafak Journal of Optoelectronics and Advanced Materials 13 (5), 713, 2011 | 16 | 2011 |
| Current transport mechanisms and trap state investigations in (Ni/Au)–AlN/GaN Schottky barrier diodes E Arslan, S Bütün, Y Şafak, H Çakmak, H Yu, E Özbay Microelectronics Reliability 51 (3), 576-580, 2011 | 16 | 2011 |
| Investigation of interface states in Al/SiO2/p-Si (MIS) structures with 50 and 826 Å SiO2 interfacial layer using admittance spectroscopy method Ş Altindal, Y Şafak Asar, A Kaya, Z Sönmez Journal of Optoelectronics and Advanced Materials 14 (11), 998, 2012 | 14 | 2012 |
| A. Türüt,“Current and voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range” Ö Vural, Y Şafak, Ş Altındal Current Applied Physics 10, 761, 2010 | 6 | 2010 |
| The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1−xN/AlN/GaN heterostructures Ş Altındal, Y Şafak, İ Taşçıoğlu, E Özbay Surface and Interface Analysis 42 (6‐7), 803-806, 2010 | 4 | 2010 |
| Frequency dependent electrical characteristics of (Ni/Au)/AlGaN/AlN/GaN heterostructures İ TAŞÇIOĞLU, H USLU, Y Şafak, E Özbay Optoelectronics and Advanced Materials-Rapid Communications 4 (June 2010 …, 2010 | 2 | 2010 |
| The effect of frequency and illumination intensity on the main electrical characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature H Uslu, Y Şafak, I Taşçioglu, Ş Altindal Journal of Optoelectronics and Advanced Materials 12 (2), 262, 2010 | 2 | 2010 |
| Temperature‐dependent profile of the surface states and series resistance in (Ni/Au)/AlGaN/AlN/GaN heterostructures İ Taşçıoǧlu, U Aydemir, Y Şafak, E Özbay Surface and Interface Analysis 42 (6‐7), 812-815, 2010 | 1 | 2010 |
| Dielectric spectroscopy studies and ac electrical conductivity on/TiO2/p-GaAs MIS structures YŞ Asar, T Asar, Ş Altındal, S Özçelik | | 2015 |
| FREQUENCY AND TEMPERATURE DEPENDENT INTERFACE STATES AND SERIES RESISTANCE OF Au/CdTe SCHOTTKY DIODES TS MAMADOV, H KANBUR, Y ŞAFAK, Ş ALTINDAL, S ACAR, ... Azerbaijan Journal of Physics, Fizika 13 (4), 2007 | | 2007 |
