| Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride MV Kamalakar, A Dankert, J Bergsten, T Ive, SP Dash Scientific reports 4 (1), 6146, 2014 | 182 | 2014 |
| A GaN–SiC hybrid material for high-frequency and power electronics JT Chen, J Bergsten, J Lu, E Janzén, M Thorsell, L Hultman, N Rorsman, ... Applied Physics Letters 113 (4), 2018 | 91 | 2018 |
| Dispersive effects in microwave AlGaN/AlN/GaN HEMTs with carbon-doped buffer S Gustafsson, JT Chen, J Bergsten, U Forsberg, M Thorsell, E Janzén, ... IEEE Transactions on Electron Devices 62 (7), 2162-2169, 2015 | 77 | 2015 |
| Electron trapping in extended defects in microwave AlGaN/GaN HEMTs with carbon-doped buffers J Bergsten, M Thorsell, D Adolph, JT Chen, O Kordina, ... IEEE Transactions on Electron Devices 65 (6), 2446-2453, 2018 | 67 | 2018 |
| Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures MV Kamalakar, A Dankert, J Bergsten, T Ive, SP Dash Applied Physics Letters 105 (21), 2014 | 54 | 2014 |
| Spin transport and precession in graphene measured by nonlocal and three-terminal methods A Dankert, MV Kamalakar, J Bergsten, SP Dash Applied Physics Letters 104 (19), 2014 | 49 | 2014 |
| Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results X Li, J Bergsten, D Nilsson, Ö Danielsson, H Pedersen, N Rorsman, ... Applied Physics Letters 107 (26), 2015 | 48 | 2015 |
| A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs YK Lin, J Bergsten, H Leong, A Malmros, JT Chen, DY Chen, O Kordina, ... Semiconductor Science and Technology 33 (9), 095019, 2018 | 34 | 2018 |
| Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition T Huang, A Malmros, J Bergsten, S Gustafsson, O Axelsson, M Thorsell, ... IEEE Electron Device Letters 36 (6), 537-539, 2015 | 32 | 2015 |
| Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures J Bergsten, A Malmros, M Tordjman, P Gamarra, C Lacam, ... Semiconductor Science and Technology 30 (10), 105034, 2015 | 30 | 2015 |
| Performance enhancement of microwave GaN HEMTs without an AlN-exclusion layer using an optimized AlGaN/GaN interface growth process J Bergsten, JT Chen, S Gustafsson, A Malmros, U Forsberg, M Thorsell, ... IEEE Transactions on electron devices 63 (1), 333-338, 2015 | 25 | 2015 |
| Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs A Pooth, J Bergsten, N Rorsman, H Hirshy, R Perks, P Tasker, T Martin, ... Microelectronics Reliability 68, 2-4, 2017 | 17 | 2017 |
| Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs T Huang, J Bergsten, M Thorsell, N Rorsman IEEE Transactions on Electron Devices 65 (3), 908-914, 2018 | 12 | 2018 |
| Impact of AlGaN/GaN interface and passivation on the robustness of low-noise amplifiers T Huang, O Axelsson, J Bergsten, M Thorsell, N Rorsman IEEE Transactions on Electron Devices 67 (6), 2297-2303, 2020 | 11 | 2020 |
| The similarity renormalization group for three-body interactions in one dimension O Åkerlund, EJ Lindgren, J Bergsten, B Grevholm, P Lerner, R Linscott, ... The European Physical Journal A 47, 1-7, 2011 | 10 | 2011 |
| Influence of spacer thickness on the noise performance in InP HEMTs for cryogenic LNAs J Li, A Pourkabirian, J Bergsten, N Wadefalk, J Grahn IEEE Electron Device Letters 43 (7), 1029-1032, 2022 | 9 | 2022 |
| AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor J Bergsten, X Li, D Nilsson, Ö Danielsson, H Pedersen, E Janzén, ... Japanese Journal of Applied Physics 55 (5S), 05FK02, 2016 | 9 | 2016 |
| Achieving low-recovery time in algan/gan hemts with aln interlayer under low-noise amplifiers operation T Huang, O Axelsson, J Bergsten, M Thorsell, N Rorsman IEEE Electron Device Letters 38 (7), 926-928, 2017 | 8 | 2017 |
| Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process T Huang, C Liu, J Bergsten, H Jiang, KM Lau, N Rorsman 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016 | 7 | 2016 |
| Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition T Huang, H Jiang, J Bergsten, KM Lau, N Rorsman Applied Physics Letters 113 (23), 2018 | 6 | 2018 |
