Erfu Liu
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Integrated digital inverters based on two-dimensional anisotropic ReS 2 field-effect transistors
E Liu, Y Fu, Y Wang, Y Feng, H Liu, X Wan, W Zhou, B Wang, L Shao, ...
Nature communications 6 (1), 1-7, 2015
Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus
M Long, A Gao, P Wang, H Xia, C Ott, C Pan, Y Fu, E Liu, X Chen, W Lu, ...
Science advances 3 (6), e1700589, 2017
Broadband photovoltaic detectors based on an atomically thin heterostructure
M Long, E Liu, P Wang, A Gao, H Xia, W Luo, B Wang, J Zeng, Y Fu, K Xu, ...
Nano letters 16 (4), 2254-2259, 2016
High Responsivity Phototransistors Based on Few‐Layer ReS2 for Weak Signal Detection
E Liu, M Long, J Zeng, W Luo, Y Wang, Y Pan, W Zhou, B Wang, W Hu, ...
Advanced Functional Materials 26 (12), 1938-1944, 2016
Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe 2
Y Wang, E Liu, H Liu, Y Pan, L Zhang, J Zeng, Y Fu, M Wang, K Xu, ...
Nature communications 7 (1), 1-6, 2016
Raman vibrational spectra of bulk to monolayer Re S 2 with lower symmetry
Y Feng, W Zhou, Y Wang, J Zhou, E Liu, Y Fu, Z Ni, X Wu, H Yuan, F Miao, ...
Physical Review B 92 (5), 054110, 2015
Gate-Induced Interfacial Superconductivity in 1T-SnSe2
J Zeng, E Liu, Y Fu, Z Chen, C Pan, C Wang, M Wang, Y Wang, K Xu, ...
Nano letters 18 (2), 1410-1415, 2018
Negative photoconductance in van der Waals heterostructure-based floating gate phototransistor
Y Wang, E Liu, A Gao, T Cao, M Long, C Pan, L Zhang, J Zeng, C Wang, ...
ACS nano 12 (9), 9513-9520, 2018
Experimental identification of critical condition for drastically enhancing thermoelectric power factor of two-dimensional layered materials
J Zeng, X He, SJ Liang, E Liu, Y Sun, C Pan, Y Wang, T Cao, X Liu, ...
Nano letters 18 (12), 7538-7545, 2018
Gate Tunable Dark Trions in Monolayer
E Liu, J van Baren, Z Lu, MM Altaiary, T Taniguchi, K Watanabe, ...
Physical review letters 123 (2), 027401, 2019
Gate-tunable rectification inversion and photovoltaic detection in graphene/WSe2 heterostructures
A Gao, E Liu, M Long, W Zhou, Y Wang, T Xia, W Hu, B Wang, F Miao
Applied Physics Letters 108 (22), 223501, 2016
Magnetophotoluminescence of exciton Rydberg states in monolayer
E Liu, J van Baren, T Taniguchi, K Watanabe, YC Chang, CH Lui
Physical Review B 99 (20), 205420, 2019
Valley-selective chiral phonon replicas of dark excitons and trions in monolayer
E Liu, J van Baren, T Taniguchi, K Watanabe, YC Chang, CH Lui
Physical Review Research 1 (3), 032007, 2019
The positive piezoconductive effect in graphene
K Xu, K Wang, W Zhao, W Bao, E Liu, Y Ren, M Wang, Y Fu, J Zeng, Z Li, ...
Nature communications 6 (1), 1-6, 2015
Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions
C Pan, CY Wang, SJ Liang, Y Wang, T Cao, P Wang, C Wang, S Wang, ...
Nature Electronics, 1-8, 2020
Gated tuned superconductivity and phonon softening in monolayer and bilayer MoS 2
Y Fu, E Liu, H Yuan, P Tang, B Lian, G Xu, J Zeng, Z Chen, Y Wang, ...
npj Quantum Materials 2 (1), 1-7, 2017
Proximity-Induced Superconductivity with Subgap Anomaly in Type II Weyl Semi-Metal WTe2
Q Li, C He, Y Wang, E Liu, M Wang, Y Wang, J Zeng, Z Ma, T Cao, C Yi, ...
Nano letters 18 (12), 7962-7968, 2018
Cleavage tendency of anisotropic two-dimensional materials: () and
H Wang, E Liu, Y Wang, B Wan, CH Ho, F Miao, XG Wan
Physical Review B 96 (16), 165418, 2017
Gate-tunable weak antilocalization in a few-layer InSe
J Zeng, SJ Liang, A Gao, Y Wang, C Pan, C Wu, E Liu, L Zhang, T Cao, ...
Physical Review B 98 (12), 125414, 2018
Analog Circuit Applications Based on Ambipolar Graphene/MoTe2 Vertical Transistors
C Pan, Y Fu, J Wang, J Zeng, G Su, M Long, E Liu, C Wang, A Gao, ...
Advanced Electronic Materials 4 (3), 1700662, 2018
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