| On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs) H Tecimer, H Uslu, ZA Alahmed, F Yakuphanoğlu, Ş Altındal Composites Part B: Engineering 57, 25-30, 2014 | 106 | 2014 |
| Temperature dependent current-transport mechanism in Au/(Zn-doped) PVA/n-GaAs Schottky barrier diodes (SBDs) H Tecimer, A Türüt, H Uslu, Ş Altındal, İ Uslu Sensors and Actuators A: Physical 199, 194-201, 2013 | 93 | 2013 |
| Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial … O Çiçek, HU Tecimer, SO Tan, H Tecimer, Ş Altındal, I Uslu Composites Part B: Engineering 98, 260-268, 2016 | 84 | 2016 |
| Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures O Çiçek, HU Tecimer, SO Tan, H Tecimer, İ Orak, Ş Altındal Composites Part B: Engineering 113, 14-23, 2017 | 80 | 2017 |
| Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures HG Çetinkaya, H Tecimer, H Uslu, Ş Altındal Current Applied Physics 13 (6), 1150-1156, 2013 | 77 | 2013 |
| Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC+ TCNQ/p-Si structure at room temperature A Kaya, Ö Vural, H Tecimer, S Demirezen, Ş Altındal Current Applied Physics 14 (3), 322-330, 2014 | 65 | 2014 |
| Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities SO Tan, H Uslu Tecimer, O Çiçek, H Tecimer, İ Orak, Ş Altındal Journal of Materials Science: Materials in Electronics 27, 8340-8347, 2016 | 64 | 2016 |
| A comparative study on electrical characteristics of Au/N-Si Schottky diodes, with and without Bi-doped PVA interfacial layer in dark and under illumination at room temperature S Alialy, H Tecimer, H Uslu, Ş Altındal J Nanomed Nanotechol 4 (3), 1000167, 2013 | 58 | 2013 |
| Frequency-dependent admittance analysis of the metal–semiconductor structure with an interlayer of Zn-doped organic polymer nanocomposites H Tecimer, SO Tan, Ş Altındal IEEE Transactions on Electron Devices 65 (1), 231-236, 2017 | 50 | 2017 |
| Comparative investigation on the effects of organic and inorganic interlayers in Au/n-GaAs Schottky diodes SO Tan, H Tecimer, O Çiçek IEEE Transactions on Electron Devices 64 (3), 984-990, 2017 | 49 | 2017 |
| Schottky diode properties of CuInSe2 films prepared by a two-step growth technique H Tecimer, S Aksu, H Uslu, Y Atasoy, E Bacaksız, Ş Altındal Sensors and Actuators A: Physical 185, 73-81, 2012 | 44 | 2012 |
| Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination level Ş Altındal, T Tunç, H Tecimer, İ Yücedağ Materials science in semiconductor processing 28, 48-53, 2014 | 41 | 2014 |
| Capacitance/Conductance–Voltage–Frequency Characteristics of Structures in Wide Frequency Range A Kaya, H Tecimer, Ö Vural, İH Taşdemir, Ş Altındal IEEE Transactions On Electron Devices 61 (2), 584-590, 2014 | 38 | 2014 |
| Temperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC+ TCNQ/p-Si structures İ Yücedağ, A Kaya, H Tecimer, Ş Altındal Materials science in semiconductor processing 28, 37-42, 2014 | 36 | 2014 |
| Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes HU Tecimer, MA Alper, H Tecimer, SO Tan, Ş Altındal Polymer Bulletin 75, 4257-4271, 2018 | 26 | 2018 |
| Frequency dependent C–V and G/ω–V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes SO Tan, HU Tecimer, O Çiçek, H Tecimer, Ş Altındal Journal of Materials Science: Materials in Electronics 28, 4951-4957, 2017 | 26 | 2017 |
| A comparative electric and dielectric properties of Al/p-Si structures with undoped and Co-doped interfacial PVA layer A Kaya, İ Yücedağ, H Tecimer, S Altındal Materials science in semiconductor processing 28, 26-30, 2014 | 25 | 2014 |
| Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures EE Baydilli, SO Tan, HU Tecimer, Ş Altındal Physica B: Condensed Matter 598, 412457, 2020 | 21 | 2020 |
| Illumination dependent electrical data identification of the cdzno interlayered metal-semiconductor structures SO Tan, İ Taşçıoğlu, S Altındal Yerişkin, H Tecimer, F Yakuphanoğlu Silicon 12, 2885-2891, 2020 | 20 | 2020 |
| Dielectric characterization of BSA doped-PANI interlayered metal–semiconductor structures N Karaoğlan, HU Tecimer, Ş Altındal, C Bindal Journal of Materials Science: Materials in Electronics 30, 14224-14232, 2019 | 20 | 2019 |
Şemsettin ALTINDALgazi UniversityVerified email at gazi.edu.tr
