Bismuth-induced effects on optical, lattice vibrational, and structural properties of bulk GaAsBi alloys F Sarcan, Ö Dönmez, K Kara, A Erol, E Akalın, M Çetin Arıkan, ... Nanoscale Research Letters 9, 1-7, 2014 | 41 | 2014 |
Anisotropic electron factor as a probe of the electronic structure of epilayers CA Broderick, S Mazzucato, H Carrère, T Amand, H Makhloufi, A Arnoult, ... Physical Review B 90 (19), 195301, 2014 | 37 | 2014 |
Characterization of a GaAs/GaAsBi pin solar cell A Muhammetgulyyev, OG Erbas, B Kinaci, O Donmez, YG Celebi, A Erol Semiconductor Science and Technology 34 (8), 085001, 2019 | 22 | 2019 |
An analysis of Hall mobility in as-grown and annealed n-and p-type modulation-doped GaInNAs/GaAs quantum wells F Sarcan, O Donmez, M Gunes, A Erol, MC Arikan, J Puustinen, M Guina Nanoscale research letters 7, 1-6, 2012 | 22 | 2012 |
Optical properties of GaBiAs single quantum well structures grown by MBE O Donmez, A Erol, MC Arikan, H Makhloufi, A Arnoult, C Fontaine Semiconductor Science and Technology 30 (9), 094016, 2015 | 21 | 2015 |
Magnetotransport study on as-grown and annealed n-and p-type modulation-doped GaInNAs/GaAs strained quantum well structures Ö Dönmez, F Sarcan, A Erol, M Gunes, MÇ Arikan, J Puustinen, M Guina Nanoscale research letters 9, 1-6, 2014 | 21 | 2014 |
Thermal annealing effects on optical and structural properties of GaBiAs epilayers: Origin of the thermal annealing-induced redshift in GaBiAs O Donmez, K Kara, A Erol, E Akalin, H Makhloufi, A Arnoult, C Fontaine Journal of Alloys and Compounds 686, 976-981, 2016 | 20 | 2016 |
Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility O Donmez, M Aydın, Ş Ardalı, S Yıldırım, E Tıraş, F Nutku, Ç Cetinkaya, ... Semiconductor Science and Technology 35 (2), 025009, 2020 | 19 | 2020 |
Optical properties of n-and p-type modulation doped GaAsBi/AlGaAs quantum well structures C Cetinkaya, E Cokduygulular, F Nutku, O Donmez, J Puustinen, J Hilska, ... Journal of Alloys and Compounds 739, 987-996, 2018 | 19 | 2018 |
Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures O Donmez, F Sarcan, SB Lisesivdin, MP Vaughan, A Erol, M Gunes, ... Semiconductor Science and Technology 29 (12), 125009, 2014 | 19 | 2014 |
Influence of nitrogen on hole effective mass and hole mobility in p-type modulation doped GaInNAs/GaAs quantum well structures F Sarcan, O Donmez, A Erol, M Gunes, MC Arikan, J Puustinen, M Guina Applied Physics Letters 103 (8), 2013 | 19 | 2013 |
Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures A Erol, E Akalin, F Sarcan, O Donmez, S Akyuz, CM Arikan, J Puustinen, ... Nanoscale Research Letters 7, 1-8, 2012 | 15 | 2012 |
High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1− xN O Donmez, M Gunes, A Erol, MC Arikan, N Balkan Journal of Applied Physics 110 (10), 2011 | 15 | 2011 |
Quantum oscillations and interference effects in strained n-and p-type modulation doped GaInNAs/GaAs quantum wells F Sarcan, F Nutku, O Donmez, F Kuruoglu, S Mutlu, A Erol, S Yildirim, ... Journal of Physics D: Applied Physics 48 (30), 305108, 2015 | 14 | 2015 |
A quantitative analysis of electronic transport in n-and p-type modulation-doped GaAsBi/AlGaAs quantum well structures O Donmez, A Erol, Ç Çetinkaya, E Çokduygulular, M Aydın, S Yıldırım, ... Semiconductor Science and Technology 36 (11), 115017, 2021 | 12 | 2021 |
The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys O Donmez, M Gunes, A Erol, CM Arikan, N Balkan, WJ Schaff Nanoscale research letters 7, 1-6, 2012 | 11 | 2012 |
Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures O Donmez, M Aydın, Ş Ardalı, S Yıldırım, E Tıraş, A Erol, J Puustinen, ... Semiconductor Science and Technology 35 (9), 095038, 2020 | 10 | 2020 |
Optical properties of GaAs1− xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311) B GaAs substrates M Gunes, MO Ukelge, O Donmez, A Erol, C Gumus, H Alghamdi, ... Semiconductor Science and Technology 33 (12), 124015, 2018 | 10 | 2018 |
A study of photomodulated reflectance on staircase-like, n-doped GaAs/Al x Ga1−xAs quantum well structures O Donmez, F Nutku, A Erol, CM Arikan, Y Ergun Nanoscale Research Letters 7, 1-5, 2012 | 10 | 2012 |
Influence of high electron concentration on band gap and effective electron mass of InN O Donmez, M Yilmaz, A Erol, B Ulug, MC Arikan, A Ulug, AO Ajagunna, ... physica status solidi (b) 248 (5), 1172-1175, 2011 | 9 | 2011 |