Aaron Arehart
Aaron Arehart
Assistant Research Professor of Electrical and Computer Engineering, The Ohio State University
Verified email at osu.edu
Title
Cited by
Cited by
Year
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
Z Zhang, E Farzana, AR Arehart, SA Ringel
Applied Physics Letters 108 (5), 052105, 2016
2122016
Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
A Armstrong, AR Arehart, B Moran, SP DenBaars, UK Mishra, JS Speck, ...
Applied Physics Letters 84 (3), 374-376, 2004
1962004
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
A Armstrong, AR Arehart, D Green, UK Mishra, JS Speck, SA Ringel
Journal of Applied physics 98 (5), 053704, 2005
1732005
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 023502, 2017
1662017
Effect of threading dislocation density on Schottky diode characteristics
AR Arehart, B Moran, JS Speck, UK Mishra, SP DenBaars, SA Ringel
Journal of applied physics 100 (2), 023709, 2006
1122006
Deep level optical and thermal spectroscopy of traps in -GaN grown by ammonia molecular beam epitaxy
AR Arehart, A Corrion, C Poblenz, JS Speck, UK Mishra, SA Ringel
Applied Physics Letters 93 (11), 112101, 2008
1002008
Influence of metal choice on (010) β-Ga2O3 Schottky diode properties
E Farzana, Z Zhang, PK Paul, AR Arehart, SA Ringel
Applied Physics Letters 110 (20), 202102, 2017
902017
Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
DW Cardwell, A Sasikumar, AR Arehart, SW Kaun, J Lu, S Keller, ...
Applied Physics Letters 102 (19), 193509, 2013
892013
Impact of Ga/N flux ratio on trap states in grown by plasma-assisted molecular-beam epitaxy
A Hierro, AR Arehart, B Heying, M Hansen, UK Mishra, SP DenBaars, ...
Applied physics letters 80 (5), 805-807, 2002
762002
Capture Kinetics of Electron Traps in MBE‐Grown n‐GaN
A Hierro, AR Arehart, B Heying, M Hansen, JS Speck, UK Mishra, ...
physica status solidi (b) 228 (1), 309-313, 2001
702001
Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
E Farzana, E Ahmadi, JS Speck, AR Arehart, SA Ringel
Journal of Applied Physics 123 (16), 161410, 2018
672018
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
AR Arehart, A Sasikumar, S Rajan, GD Via, B Poling, B Winningham, ...
Solid-State Electronics 80, 19-22, 2013
662013
Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate
JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
652018
Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs
J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
652015
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
A Sasikumar, AR Arehart, S Martin-Horcajo, MF Romero, Y Pei, D Brown, ...
Applied Physics Letters 103 (3), 033509, 2013
622013
Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes
AR Arehart, AA Allerman, SA Ringel
Journal of Applied Physics 109 (11), 114506, 2011
612011
Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1
L Ma, DN Nath, EW Lee, CH Lee, M Yu, A Arehart, S Rajan, Y Wu
Applied Physics Letters 105 (7), 072105, 2014
582014
-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
562019
Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films
AR Arehart, A Corrion, C Poblenz, JS Speck, UK Mishra, SP DenBaars, ...
physica status solidi c 5 (6), 1750-1752, 2008
562008
Deep levels and their impact on generation current in Sn-doped InGaAsN
RJ Kaplar, AR Arehart, SA Ringel, AA Allerman, RM Sieg, SR Kurtz
Journal of Applied Physics 90 (7), 3405-3408, 2001
562001
The system can't perform the operation now. Try again later.
Articles 1–20