Aaron Arehart
Aaron Arehart
Assistant Research Professor of Electrical and Computer Engineering, The Ohio State University
Verified email at osu.edu
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Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
Z Zhang, E Farzana, AR Arehart, SA Ringel
Applied Physics Letters 108 (5), 052105, 2016
Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
A Armstrong, AR Arehart, B Moran, SP DenBaars, UK Mishra, JS Speck, ...
Applied Physics Letters 84 (3), 374-376, 2004
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
A Armstrong, AR Arehart, D Green, UK Mishra, JS Speck, SA Ringel
Journal of Applied physics 98 (5), 053704, 2005
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 023502, 2017
Effect of threading dislocation density on Schottky diode characteristics
AR Arehart, B Moran, JS Speck, UK Mishra, SP DenBaars, SA Ringel
Journal of applied physics 100 (2), 023709, 2006
Deep level optical and thermal spectroscopy of traps in -GaN grown by ammonia molecular beam epitaxy
AR Arehart, A Corrion, C Poblenz, JS Speck, UK Mishra, SA Ringel
Applied Physics Letters 93 (11), 112101, 2008
Influence of metal choice on (010) β-Ga2O3 Schottky diode properties
E Farzana, Z Zhang, PK Paul, AR Arehart, SA Ringel
Applied Physics Letters 110 (20), 202102, 2017
Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
DW Cardwell, A Sasikumar, AR Arehart, SW Kaun, J Lu, S Keller, ...
Applied Physics Letters 102 (19), 193509, 2013
Impact of Ga/N flux ratio on trap states in grown by plasma-assisted molecular-beam epitaxy
A Hierro, AR Arehart, B Heying, M Hansen, UK Mishra, SP DenBaars, ...
Applied physics letters 80 (5), 805-807, 2002
Capture Kinetics of Electron Traps in MBE‐Grown n‐GaN
A Hierro, AR Arehart, B Heying, M Hansen, JS Speck, UK Mishra, ...
physica status solidi (b) 228 (1), 309-313, 2001
Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
E Farzana, E Ahmadi, JS Speck, AR Arehart, SA Ringel
Journal of Applied Physics 123 (16), 161410, 2018
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
AR Arehart, A Sasikumar, S Rajan, GD Via, B Poling, B Winningham, ...
Solid-State Electronics 80, 19-22, 2013
Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate
JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs
J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
A Sasikumar, AR Arehart, S Martin-Horcajo, MF Romero, Y Pei, D Brown, ...
Applied Physics Letters 103 (3), 033509, 2013
Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes
AR Arehart, AA Allerman, SA Ringel
Journal of Applied Physics 109 (11), 114506, 2011
Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1
L Ma, DN Nath, EW Lee, CH Lee, M Yu, A Arehart, S Rajan, Y Wu
Applied Physics Letters 105 (7), 072105, 2014
-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films
AR Arehart, A Corrion, C Poblenz, JS Speck, UK Mishra, SP DenBaars, ...
physica status solidi c 5 (6), 1750-1752, 2008
Deep levels and their impact on generation current in Sn-doped InGaAsN
RJ Kaplar, AR Arehart, SA Ringel, AA Allerman, RM Sieg, SR Kurtz
Journal of Applied Physics 90 (7), 3405-3408, 2001
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