Aaron Arehart
Aaron Arehart
Assistant Research Professor of Electrical and Computer Engineering, The Ohio State University
Verified email at osu.edu
Title
Cited by
Cited by
Year
Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
A Armstrong, AR Arehart, B Moran, SP DenBaars, UK Mishra, JS Speck, ...
Applied physics letters 84 (3), 374-376, 2004
1812004
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
Z Zhang, E Farzana, AR Arehart, SA Ringel
Applied Physics Letters 108 (5), 052105, 2016
1762016
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
A Armstrong, AR Arehart, D Green, UK Mishra, JS Speck, SA Ringel
Journal of Applied physics 98 (5), 053704, 2005
1632005
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 023502, 2017
1352017
Effect of threading dislocation density on Schottky diode characteristics
AR Arehart, B Moran, JS Speck, UK Mishra, SP DenBaars, SA Ringel
Journal of applied physics 100 (2), 023709, 2006
1062006
Deep level optical and thermal spectroscopy of traps in -GaN grown by ammonia molecular beam epitaxy
AR Arehart, A Corrion, C Poblenz, JS Speck, UK Mishra, SA Ringel
Applied Physics Letters 93 (11), 112101, 2008
912008
Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
DW Cardwell, A Sasikumar, AR Arehart, SW Kaun, J Lu, S Keller, ...
Applied Physics Letters 102 (19), 193509, 2013
842013
Influence of metal choice on (010) β-Ga2O3 Schottky diode properties
E Farzana, Z Zhang, PK Paul, AR Arehart, SA Ringel
Applied Physics Letters 110 (20), 202102, 2017
732017
Impact of Ga/N flux ratio on trap states in grown by plasma-assisted molecular-beam epitaxy
A Hierro, AR Arehart, B Heying, M Hansen, UK Mishra, SP DenBaars, ...
Applied physics letters 80 (5), 805-807, 2002
732002
Capture Kinetics of Electron Traps in MBE‐Grown n‐GaN
A Hierro, AR Arehart, B Heying, M Hansen, JS Speck, UK Mishra, ...
physica status solidi (b) 228 (1), 309-313, 2001
672001
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
A Sasikumar, AR Arehart, S Martin-Horcajo, MF Romero, Y Pei, D Brown, ...
Applied Physics Letters 103 (3), 033509, 2013
632013
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
AR Arehart, A Sasikumar, S Rajan, GD Via, B Poling, B Winningham, ...
Solid-State Electronics 80, 19-22, 2013
602013
Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate
JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
572018
Deep levels and their impact on generation current in Sn-doped InGaAsN
RJ Kaplar, AR Arehart, SA Ringel, AA Allerman, RM Sieg, SR Kurtz
Journal of Applied Physics 90 (7), 3405-3408, 2001
562001
Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
E Farzana, E Ahmadi, JS Speck, AR Arehart, SA Ringel
Journal of Applied Physics 123 (16), 161410, 2018
522018
Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1
L Ma, DN Nath, EW Lee, CH Lee, M Yu, A Arehart, S Rajan, Y Wu
Applied Physics Letters 105 (7), 072105, 2014
522014
Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen
RD Long, CM Jackson, J Yang, A Hazeghi, C Hitzman, S Majety, ...
Applied Physics Letters 103 (20), 201607, 2013
522013
Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes
AR Arehart, AA Allerman, SA Ringel
Journal of Applied Physics 109 (11), 114506, 2011
522011
Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs
J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
512015
Layer-transferred MoS2/GaN PN diodes
EW Lee, CH Lee, PK Paul, L Ma, WD McCulloch, S Krishnamoorthy, Y Wu, ...
Applied Physics Letters 107 (10), 103505, 2015
512015
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