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ZENG ZHANG
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Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
Z Zhang, E Farzana, AR Arehart, SA Ringel
Applied Physics Letters 108 (5), 2016
3362016
Influence of metal choice on (010) β-Ga2O3 Schottky diode properties
E Farzana, Z Zhang, PK Paul, AR Arehart, SA Ringel
Applied Physics Letters 110 (20), 2017
1832017
Impact of proton irradiation on deep level states in n-GaN
Z Zhang, AR Arehart, E Cinkilic, J Chen, EX Zhang, DM Fleetwood, ...
Applied Physics Letters 103 (4), 2013
762013
Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy
Z Zhang, CA Hurni, AR Arehart, J Yang, RC Myers, JS Speck, SA Ringel
Applied Physics Letters 100 (5), 2012
482012
Modification of the valence band structures of polar and nonpolar plane wurtzite-GaN by anisotropic strain
D Fu, R Zhang, B Wang, Z Zhang, B Liu, Z Xie, X Xiu, H Lu, Y Zheng, ...
Journal of Applied Physics 106 (2), 2009
422009
Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy
Z Zhang, AR Arehart, ECH Kyle, J Chen, EX Zhang, DM Fleetwood, ...
Applied Physics Letters 106 (2), 2015
412015
Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN
Z Zhang, E Farzana, WY Sun, J Chen, EX Zhang, DM Fleetwood, ...
Journal of Applied Physics 118 (15), 2015
342015
Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures
Z Zhang, D Cardwell, A Sasikumar, ECH Kyle, J Chen, EX Zhang, ...
Journal of Applied Physics 119 (16), 2016
332016
Circular photogalvanic effect at inter-band excitation in InN
Z Zhang, R Zhang, B Liu, ZL Xie, XQ Xiu, P Han, H Lu, YD Zheng, ...
Solid state communications 145 (4), 159-162, 2008
262008
Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies
E Gür, Z Zhang, S Krishnamoorthy, S Rajan, SA Ringel
Applied Physics Letters 99 (9), 2011
242011
Correlation of a generation-recombination center with a deep level trap in GaN
XS Nguyen, K Lin, Z Zhang, B McSkimming, AR Arehart, JS Speck, ...
Applied Physics Letters 106 (10), 102101, 2015
222015
Observation of the surface circular photogalvanic effect in InN films
Z Zhang, R Zhang, ZL Xie, B Liu, M Li, DY Fu, HN Fang, XQ Xiu, H Lu, ...
Solid state communications 149 (25-26), 1004-1007, 2009
222009
Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy
Z Zhang, CM Jackson, AR Arehart, B McSkimming, JS Speck, SA Ringel
Journal of electronic materials 43, 828-832, 2014
212014
Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy
Z Zhang, CA Hurni, AR Arehart, JS Speck, SA Ringel
Applied Physics Letters 101 (15), 2012
202012
Rashba spin splitting for the first two subbands in AlxGa1− xN/GaN heterostructures
M Li, R Zhang, Z Zhang, WS Yan, B Liu, D Fu, CZ Zhao, ZL Xie, XQ Xiu, ...
Superlattices and Microstructures 47 (4), 522-529, 2010
182010
Traps in AlGaInP materials and devices lattice matched to GaAs for multi-junction solar cells
AR Arehart, MR Brenner, Z Zhang, K Swaminathan, SA Ringel
2010 35th IEEE Photovoltaic Specialists Conference, 001999-002001, 2010
142010
Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films
DY Fu, R Zhang, BG Wang, Z Zhang, B Liu, ZL Xie, XQ Xiu, H Lu, ...
Applied Physics Letters 94 (19), 2009
132009
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
B Liu, Z Zhang, R Zhang, DY Fu, ZL Xie, H Lu, WJ Schaff, LH Song, ...
Applied Physics A 99, 139-143, 2010
112010
Proton irradiation-induced traps causing V T instabilities and RF degradation in GaN HEMTs
A Sasikumar, Z Zhang, P Kumar, EX Zhang, DM Fleetwood, RD Schrimpf, ...
2015 IEEE International Reliability Physics Symposium, 2E. 3.1-2E. 3.6, 2015
102015
In-plane anisotropic photoluminescence of C-plane GaN under asymmetric biaxial strain
Z Zhang, DY Fu, R Zhang, B Liu, ZL Xie, XQ Xiu, P Han, YD Zheng, ...
Applied Physics Letters 95 (1), 2009
92009
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