Mark Wistey
Mark Wistey
Associate Professor of Physics, Texas State University
Verified email at txstate.edu - Homepage
Title
Cited by
Cited by
Year
Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
DB Jackrel, SR Bank, HB Yuen, MA Wistey, JS Harris Jr, AJ Ptak, ...
Journal of Applied Physics 101 (11), 114916, 2007
2212007
Novel gate-recessed vertical InAs/GaSb TFETs with record high IONof 180 μA/μm at VDS= 0.5 V
G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012
1722012
AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78at 0.5 V
R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ...
IEEE electron device letters 33 (3), 363-365, 2012
1402012
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05
J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
IEEE Electron device letters 33 (4), 525-527, 2012
1272012
Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ...
IEEE Electron Device Letters 30 (11), 1128-1130, 2009
1172009
Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned
Y Lu, G Zhou, R Li, Q Liu, Q Zhang, T Vasen, SD Chae, T Kosel, M Wistey, ...
IEEE Electron Device Letters 33 (5), 655-657, 2012
1102012
Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs
SR Bank, MA Wistey, LL Goddard, HB Yuen, V Lordi, JS Harris
IEEE journal of quantum electronics 40 (6), 656-664, 2004
1032004
Recent Progress on 1.55- Dilute-Nitride Lasers
SR Bank, H Bae, LL Goddard, HB Yuen, MA Wistey, R Kudrawiec, ...
IEEE Journal of Quantum Electronics 43 (9), 773-785, 2007
1002007
The role of Sb in the MBE growth of (GaIn)(NAsSb)
K Volz, V Gambin, W Ha, MA Wistey, H Yuen, S Bank, JS Harris
Journal of Crystal Growth 251 (1-4), 360-366, 2003
952003
InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and Ratio Near
G Zhou, Y Lu, R Li, Q Zhang, Q Liu, T Vasen, H Zhu, JM Kuo, T Kosel, ...
IEEE electron device letters 33 (6), 782-784, 2012
922012
GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy
V Gambin, W Ha, M Wistey, H Yuen, SR Bank, SM Kim, JS Harris
IEEE Journal of selected topics in quantum electronics 8 (4), 795-800, 2002
922002
Long-wavelength GaInNAs (Sb) lasers on GaAs
W Ha, V Gambin, S Bank, M Wistey, H Yuen, S Kim, JS Harris
IEEE journal of quantum electronics 38 (9), 1260-1267, 2002
912002
Ultralow resistance in situ Ohmic contacts to InGaAs/InP
U Singisetti, MA Wistey, JD Zimmerman, BJ Thibeault, MJW Rodwell, ...
Applied Physics Letters 93 (18), 183502, 2008
862008
Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm
W Ha, V Gambin, M Wistey, S Bank, S Kim, JS Harris
IEEE Photonics Technology Letters 14 (5), 591-593, 2002
862002
Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications
JS Harris Jr, R Kudrawiec, HB Yuen, SR Bank, HP Bae, MA Wistey, ...
physica status solidi (b) 244 (8), 2707-2729, 2007
782007
Room-temperature continuous-wave 1.55/spl mu/m GaInNAsSb laser on GaAs
SR Bank, HP Bae, HB Yuen, MA Wistey, LL Goddard, JS Harris
Electronics Letters 42 (3), 156-157, 2006
782006
Low-threshold CW GaInNAsSb/GaAs laser at 1.49/spl mu/m
SR Bank, MA Wistey, HB Yuen, LL Goddard, W Ha, JS Harris
Electronics Letters 39 (20), 1445-1446, 2003
742003
Ultralow resistance, nonalloyed Ohmic contacts to
AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
672009
Chemical routes to structures for low temperature Si-based semiconductor applications
MA Wistey, YY Fang, J Tolle, AVG Chizmeshya, J Kouvetakis
Applied physics letters 90 (8), 082108, 2007
602007
Nitrogen plasma optimization for high-quality dilute nitrides
MA Wistey, SR Bank, HB Yuen, H Bae, JS Harris Jr
Journal of crystal growth 278 (1-4), 229-233, 2005
592005
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