Buried Power Rails and Back-side Power Grids: Arm® CPU Power Delivery Network Design Beyond 5nm D Prasad, SST Nibhanupudi, S Das, O Zografos, B Chehab, S Sarkar, ...
2019 IEEE International Electron Devices Meeting (IEDM), 19.1. 1-19.1. 4, 2019
64 2019 A 12.08-TOPS/W all-digital time-domain CNN engine using bi-directional memory delay lines for energy efficient edge computing A Sayal, SST Nibhanupudi, S Fathima, JP Kulkarni
IEEE Journal of Solid-State Circuits 55 (1), 60-75, 2019
53 2019 14.4 all-digital time-domain CNN engine using bidirectional memory delay lines for energy-efficient edge computing A Sayal, S Fathima, SST Nibhanupudi, JP Kulkarni
2019 IEEE International Solid-State Circuits Conference-(ISSCC), 228-230, 2019
37 2019 COMPAC: Compressed time-domain, pooling-aware convolution CNN engine with reduced data movement for energy-efficient AI computing A Sayal, S Fathima, SST Nibhanupudi, JP Kulkarni
IEEE Journal of Solid-State Circuits 56 (7), 2205-2220, 2020
21 2020 Ultra-low-voltage UTBB-SOI-based, pseudo-static storage circuits for cryogenic CMOS applications SST Nibhanupudi, SRS Raman, M Cassé, L Hutin, JP Kulkarni
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 7 …, 2021
11 2021 A holistic evaluation of buried power rails and back-side power for sub-5 nm technology nodes SST Nibhanupudi, D Prasad, S Das, O Zografos, A Robinson, A Gupta, ...
IEEE Transactions on Electron Devices 69 (8), 4453-4459, 2022
9 2022 Reconfigurable low-voltage hexagonal boron nitride nonvolatile switches for millimeter-wave wireless communications SJ Yang, MM Dahan, O Levit, F Makal, P Peterson, J Alikpala, ...
Nano Letters 23 (4), 1152-1158, 2023
8 2023 Self-compliant threshold switching devices with high On/Off ratio by control of quantized conductance in Ag filaments M Song, S Lee, SST Nibhanupudi, JV Singh, M Disiena, CJ Luth, S Wu, ...
Nano Letters 23 (7), 2952-2957, 2023
7 2023 Enabling In-memory computations in non-volatile SRAM designs SRS Raman, SST Nibhanupudi, JP Kulkarni
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 12 (2 …, 2022
7 2022 Threshold selector and capacitive coupled assist techniques for write voltage reduction in metal–ferroelectric–metal field-effect transistor SRS Raman, SST Nibhanupudi, AK Saha, S Gupta, JP Kulkarni
IEEE Transactions on Electron Devices 68 (12), 6132-6138, 2021
7 2021 Phase transition material-assisted low-power SRAM design SST Nibhanupudi, SRS Raman, JP Kulkarni
IEEE Transactions on Electron Devices 68 (5), 2281-2288, 2021
7 2021 Soft-FET: phase transition material assisted soft switching field effect transistor for supply voltage droop mitigation S Teja, JP Kulkarni
Proceedings of the 55th Annual Design Automation Conference, 1-6, 2018
6 2018 Split-gate architecture for higher breakdown voltage in STI based LDMOS transistors S Teja, M Bhoir, NR Mohapatra
2017 International Conference on Electron Devices and Solid-State Circuits …, 2017
5 2017 Fault tolerant tactile sensor arrays for prosthesis S Teja, J Mekie, JJ Cabibihan, NV Thakor, SL Kukreja
2016 6th IEEE International Conference on Biomedical Robotics and …, 2016
4 2016 Statistical Analysis of 2T1R Gain-Cell RRAM Bitcell for Area Efficient, High-Performance, and Reliable Multi-level Cell Operation R Mehra, SST Nibhanupudi, JP Kulkarni
2022 Device Research Conference (DRC), 1-2, 2022
3 2022 Neural Network Assisted Compact Model for Accurate Characterization of Cycle-to-cycle Variations in 2-D JN Rohan, P Zhuang, SST Nibhanupudi, SK Banerjee, JP Kulkarni
2019 Device Research Conference (DRC), 103-104, 2019
3 2019 Ultra-fast switching memristors based on two-dimensional materials SS Teja Nibhanupudi, A Roy, D Veksler, M Coupin, KC Matthews, ...
Nature Communications 15 (1), 2334, 2024
2 2024 High density NV-SRAM using memristor and selector as technology assist SST Nibhanupudi, JP Kulkarni
2019 International Symposium on VLSI Technology, Systems and Application …, 2019
2 2019 Security robustness of buried power rail interconnect technology: Modeling, analysis and countermeasures S Oruganti, N Gupta, SST Nibhanupudi, M Wang, JP Kulkarni
2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 1944-1951, 2023
1 2023 Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices SST Nibhanupudi, D Veksler, A Roy, M Coupin, KC Matthews, J Warner, ...
2022 Device Research Conference (DRC), 1-2, 2022
1 2022 
Jaydeep KulkarniUT Austin; imec; Intel; Purdue; IIScaustin.utexas.edu üzerinde doğrulanmış e-posta adresine sahip
