Recessed-Gate Enhancement-Mode -Ga2O3 MOSFETs KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ... IEEE Electron device letters 39 (1), 67-70, 2017 | 224 | 2017 |
Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ... Semiconductor Science and Technology 35 (1), 013002, 2019 | 123 | 2019 |
Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ... Applied Physics Express 12 (12), 126501, 2019 | 46 | 2019 |
Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes E Farzana, A Bhattacharyya, NS Hendricks, T Itoh, S Krishnamoorthy, ... APL Materials 10 (11), 2022 | 15 | 2022 |
500° C operation of β-Ga2O3 field-effect transistors AE Islam, NP Sepelak, KJ Liddy, R Kahler, DM Dryden, J Williams, H Lee, ... Applied Physics Letters 121 (24), 2022 | 12 | 2022 |
Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit DM Dryden, KJ Liddy, AE Islam, JC Williams, DE Walker, NS Hendricks, ... IEEE Electron Device Letters 43 (8), 1307-1310, 2022 | 12 | 2022 |
Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown NS Hendricks, E Farzana, AE Islam, KD Leedy, KJ Liddy, J Williams, ... Applied Physics Express 16 (7), 071002, 2023 | 11 | 2023 |
Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage E Farzana, S Roy, NS Hendricks, S Krishnamoorthy, JS Speck Applied Physics Letters 123 (19), 2023 | 7 | 2023 |
Single-Event Burnout by Cf-252 Irradiation in Vertical -Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate S Islam, AS Senarath, A Sengupta, EX Zhang, DR Ball, DM Fleetwood, ... 2023 Device Research Conference (DRC), 1-2, 2023 | 3 | 2023 |
Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes NS Hendricks, AE Islam, EA Sowers, J Williams, DM Dryden, KJ Liddy, ... Journal of Applied Physics 135 (9), 2024 | 2 | 2024 |
Single-Event Burnout in Vertical β-Ga2O3 Diodes with Pt/PtOx Schottky Contacts and High-k Field-Plate Dielectrics S Islam, AS Senarath, E Farzana, DR Ball, A Sengupta, NS Hendricks, ... IEEE Transactions on Nuclear Science, 2024 | 2 | 2024 |
Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs KJ Liddy, NS Hendricks, AJ Green, A Popp, MT Lindquist, KD Leedy, ... 2019 Device Research Conference (DRC), 219-220, 2019 | 2 | 2019 |
Ni/TiO2/ -Ga2O3 Heterojunction Diodes with NiO Guard Ring Simultaneously Increasing Breakdown Voltage and Reducing Turn-on Voltage J Williams, N Hendricks, W Wang, A Adams, J Piel, D Dryden, K Liddy, ... 2023 Device Research Conference (DRC), 1-2, 2023 | 1 | 2023 |
500 degrees C operation of ss-Ga2O3 field-effect transistors AE Islam, NP Sepelak, KJ Liddy, R Kahler, DM Dryden, J Williams, H Lee, ... APPLIED PHYSICS LETTERS 121 (24), 2022 | 1 | 2022 |
Experimental study of Ni/TiO2/β-Ga2O3 metal–dielectric–semiconductor diodes using p-NiO junction termination extension J Williams, W Wang, NS Hendricks, A Adams, J Piel, DM Dryden, K Liddy, ... Journal of Vacuum Science & Technology A 42 (3), 2024 | | 2024 |
Phonon Bridges and Thermal Boundary Conductance Studies at Au/Ultrawide Bandgap Interfaces LA Larkin, G Garrett, AG Birdwell, N Hendricks, A Green, M Wraback Bulletin of the American Physical Society, 2024 | | 2024 |
Analytical Determination of Unipolar Diode Losses in Power Switching and Perspective for Ultra-Wide Bandgap Semiconductors NS Hendricks, JJ Piel, AE Islam, AJ Green 2024 IEEE Applied Power Electronics Conference and Exposition (APEC), 2670-2677, 2024 | | 2024 |
Electrical Properties of Ga2O3 Schottky Barrier Diodes with and without Mesa Structure M Kim, N Hendricks, N Moser, P Shrestha, S Pookpanratana, SM Koo, ... Electrochemical Society Meeting Abstracts 243, 1840-1840, 2023 | | 2023 |
The Relationship in -Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation S Ahmed, A Islam, D Dryden, K Liddy, N Hendricks, N Moser, K Chabak, ... 2023 Device Research Conference (DRC), 1-2, 2023 | | 2023 |
β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition E Farzana, F Alema, T Itoh, N Hendricks, A Mauze, A Osinsky, J Speck Oxide-based Materials and Devices XIII, PC120020H, 2022 | | 2022 |