The effect of gamma irradiation on electrical and dielectric properties of organic-based Schottky barrier diodes (SBDs) at room temperature H Uslu, M Yıldırım, Ş Altındal, P Durmuş Radiation Physics and Chemistry 81 (4), 362-369, 2012 | 33 | 2012 |
Frequency and voltage-dependent electrical parameters, interface traps, and series resistance profile of Au/(NiS: PVP)/n-Si structures M Ulusoy, Ş Altındal, P Durmuş, S Özçelik, Y Azizian-Kalandaragh Journal of Materials Science: Materials in Electronics 32 (10), 13693-13707, 2021 | 30 | 2021 |
Structure and reactivity of Nin (n=7–14, 19) clusters M Böyükata, ZB Güvenç, S Özçelik, P Durmus, J Jellinek International Journal of Quantum Chemistry 84 (2), 208-215, 2001 | 29 | 2001 |
Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures HG Çetinkaya, M Yıldırım, P Durmuş, Ş Altındal Journal of Alloys and Compounds 728, 896-901, 2017 | 27 | 2017 |
The effect of gamma irradiation on electrical characteristics of Au/polyvinyl alcohol (Co, Zn‐doped)/n‐Si Schottky barrier diodes İ Taşçıoğlu, H Uslu, Ş Altındal, P Durmuş, İ Dökme, T Tunç Journal of applied polymer science 118 (1), 596-603, 2010 | 25 | 2010 |
REACTION DYNAMICS OF Nin (n =19 and 20) WITH D2: DEPENDENCE ON CLUSTER SIZE, TEMPERATURE AND INITIAL ROVIBRATIONAL STATES OF THE … M Böyükata, ZB Güvenç, S Özçeli̇k, P Durmuş, J Jellinek International Journal of Modern Physics C 16 (02), 295-308, 2005 | 25 | 2005 |
Controlling the electrical characteristics of Al/p-Si structures through Bi4Ti3O12 interfacial layer P Durmuş, M Yıldırım, Ş Altındal Current Applied Physics 13 (8), 1630-1636, 2013 | 23 | 2013 |
Effects of γ-ray irradiation on the C–V and G/ω–V characteristics of Al/SiO2/p-Si (MIS) structures İ Dökme, P Durmuş, Ş Altındal Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008 | 23 | 2008 |
Influence of interfacial layer thickness on frequency dependent dielectric properties and electrical conductivity in Al/Bi4Ti3O12/p-Si structures P Durmuş, M Yıldırım Journal of Vacuum Science & Technology A 32 (6), 2014 | 22 | 2014 |
Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity HG Çetinkaya, M Yıldırım, P Durmuş, Ş Altındal Journal of Alloys and Compounds 721, 750-756, 2017 | 20 | 2017 |
Reactions of small Ni clusters with a diatomic molecule: MD simulation of D2+ Nin (n= 7–10) systems P Durmuş, M Böyükata, S Özçelik, ZB Güvenç, J Jellinek Surface science 454, 310-315, 2000 | 17 | 2000 |
Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature M Yıldırım, C Şahin, Ş Altındal, P Durmuş Journal of Electronic Materials 46, 1895-1901, 2017 | 11 | 2017 |
Gaussian distribution of inhomogeneous barrier height in Au/n-Si (111) Schottky barrier diodes at low temperatures P Durmuş, M Yıldırım Materials science in semiconductor processing 27, 145-149, 2014 | 11 | 2014 |
Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi4Ti3O12/p—Si structures by using the admittance … M Yıldırım, P Durmuş, Ş Altındal Chinese Physics B 22 (10), 108502, 2013 | 11 | 2013 |
On the profile of temperature and voltage dependence of interface states and resistivity in Au/n-Si structure with 79 Å insulator layer thickness M Yildirim, A Eroglu, Ş Altindal, P Durmuş Journal of Optoelectronics and Advanced Materials 13 (1), 98, 2011 | 11 | 2011 |
Extraction of the series resistance and interface states in Au/n-Si (111) Schottky barrier diodes (SBDs) with native insulator layer using IVT and CVT measurement methods P Durmus, S Altindal, A TATAROĞLU Journal of Optoelectronics and Advanced Materials 12 (7), 2010 | 9 | 2010 |
Distribution of interface traps in Au/2% GC‐doped Ca3Co4Ga0.001Ox/n‐Si structures AG Eroğlu, M Yıldırım, P Durmuş, İ Dökme Journal of Applied Polymer Science 137 (8), 48399, 2020 | 7 | 2020 |
Reactivity of the Nin (T)(n= 54, 55, 56) clusters with D2 (v, j) molecule: molecular dynamics simulations S Özçelik, ZB Güvenç, P Durmuş, J Jellinek Surface science 566, 377-382, 2004 | 7 | 2004 |
Two-diode behavior in metal-ferroelectric-semiconductor structures with bismuth titanate interfacial layer P Durmuş, Ş Altindal International journal of modern physics B 31 (27), 1750197, 2017 | 6 | 2017 |
Optoelectronic characterization of Bi-doped ZnO nanocomposites for Schottky interlayer applications A Demirci, HG Çetinkaya, P Durmuş, S Demirezen, Ş Altındal Physica B: Condensed Matter 670, 415338, 2023 | 4 | 2023 |