Wu Lu, Professor
Title
Cited by
Cited by
Year
AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/and low microwave noise
W Lu, J Yang, MA Khan, I Adesida
IEEE Transactions on Electron Devices 48 (3), 581-585, 2001
2742001
AlGaN/GaN HEMTs on SiC with fTof over 120 GHz
V Kumar, W Lu, R Schwindt, A Kuliev, G Simin, J Yang, MA Khan, ...
IEEE Electron Device Letters 23 (8), 455-457, 2002
2622002
Nanochannel electroporation delivers precise amounts of biomolecules into living cells
PE Boukany, A Morss, W Liao, B Henslee, HC Jung, X Zhang, B Yu, ...
Nature nanotechnology 6 (11), 747-754, 2011
2422011
Large area single crystal (0001) oriented MoS2
MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ...
Applied Physics Letters 102 (25), 252108, 2013
2062013
A comparative study of surface passivation on AlGaN/GaN HEMTs
W Lu, V Kumar, R Schwindt, E Piner, I Adesida
Solid-State Electronics 46 (9), 1441-1444, 2002
1552002
DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration
W Lu, V Kumar, EL Piner, I Adesida
IEEE Transactions on Electron Devices 50 (4), 1069-1074, 2003
1142003
Graphene supercapacitor with both high power and energy density
H Yang, S Kannappan, AS Pandian, JH Jang, YS Lee, W Lu
Nanotechnology 28 (44), 445401, 2017
992017
Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions
Z Lin, W Lu, J Lee, D Liu, JS Flynn, GR Brandes
Applied physics letters 82 (24), 4364-4366, 2003
962003
Gate current leakage and breakdown mechanism in unpassivated high electron mobility transistors by post-gate annealing
H Kim, J Lee, D Liu, W Lu
Applied Physics Letters 86 (14), 143505, 2005
942005
AlGaN/GaN Schottky diode hydrogen sensor performance at high temperatures with different catalytic metals
J Song, W Lu, JS Flynn, GR Brandes
Solid-state electronics 49 (8), 1330-1334, 2005
872005
Effect of on the etch profile of InP/InGaAsP alloys in inductively coupled plasma reactive ion etching chemistries for photonic device fabrication
SL Rommel, JH Jang, W Lu, G Cueva, L Zhou, I Adesida, G Pajer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer…, 2002
832002
Schottky diodes operated at for hydrogen sensing
J Song, W Lu, JS Flynn, GR Brandes
Applied Physics Letters 87 (13), 133501, 2005
792005
Magnetic Tweezers‐Based 3D Microchannel Electroporation for High‐Throughput Gene Transfection in Living Cells
L Chang, M Howdyshell, WC Liao, CL Chiang, D Gallego‐Perez, Z Yang, ...
Small 11 (15), 1818-1828, 2015
782015
Dielectrophoresis-assisted 3D nanoelectroporation for non-viral cell transfection in adoptive immunotherapy
L Chang, D Gallego-Perez, X Zhao, P Bertani, Z Yang, CL Chiang, ...
Lab on a Chip 15 (15), 3147-3153, 2015
682015
Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures
Z Lin, H Kim, J Lee, W Lu
Applied physics letters 84 (9), 1585-1587, 2004
672004
3D nanochannel electroporation for high-throughput cell transfection with high uniformity and dosage control
L Chang, P Bertani, D Gallego-Perez, Z Yang, F Chen, C Chiang, ...
Nanoscale 8 (1), 243-252, 2016
662016
Detection of clinically relevant levels of protein analyte under physiologic buffer using planar field effect transistors
S Gupta, M Elias, X Wen, J Shapiro, L Brillson, W Lu, SC Lee
Biosensors and Bioelectronics 24 (4), 505-511, 2008
662008
Topical tissue nano-transfection mediates non-viral stroma reprogramming and rescue
D Gallego-Perez, D Pal, S Ghatak, V Malkoc, N Higuita-Castro, ...
Nature nanotechnology 12 (10), 974-979, 2017
612017
Passivation effects in Schottky diodes by annealing
H Kim, M Schuette, H Jung, J Song, J Lee, W Lu, JC Mabon
Applied physics letters 89 (5), 053516, 2006
602006
Hydrogenated IGZO thin-film transistors using high-pressure hydrogen annealing
SI Oh, G Choi, H Hwang, W Lu, JH Jang
IEEE transactions on electron devices 60 (8), 2537-2541, 2013
582013
The system can't perform the operation now. Try again later.
Articles 1–20