Danche Spirkoska
Danche Spirkoska
Unknown affiliation
Verified email at mytum.de
Title
Cited by
Cited by
Year
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ...
Physical Review B 80 (24), 245325, 2009
5162009
Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy
C Colombo, D Spirkoska, M Frimmer, G Abstreiter, AF i Morral
Physical Review B 77 (15), 155326, 2008
4682008
Prismatic quantum heterostructures synthesized on molecular‐beam epitaxy GaAs nanowires
A Fontcuberta i Morral, D Spirkoska, J Arbiol, M Heigoldt, JR Morante, ...
small 4 (7), 899-903, 2008
1562008
Spontaneous alloy composition ordering in GaAs-AlGaAs core–shell nanowires
D Rudolph, S Funk, M Döblinger, S Morkötter, S Hertenberger, ...
Nano letters 13 (4), 1522-1527, 2013
1372013
Direct observation of a noncatalytic growth regime for GaAs nanowires
D Rudolph, S Hertenberger, S Bolte, W Paosangthong, D Spirkoska, ...
Nano letters 11 (9), 3848-3854, 2011
1312011
Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires
M Heigoldt, J Arbiol, D Spirkoska, JM Rebled, S Conesa-Boj, G Abstreiter, ...
Journal of Materials Chemistry 19 (7), 840-848, 2009
1122009
Photocurrent and photoconductance properties of a GaAs nanowire
S Thunich, L Prechtel, D Spirkoska, G Abstreiter, A Fontcuberta i Morral, ...
Applied Physics Letters 95 (8), 083111, 2009
1082009
Size and environment dependence of surface phonon modes of gallium arsenide nanowires as measured by Raman spectroscopy
D Spirkoska, G Abstreiter, AF i Morral
Nanotechnology 19 (43), 435704, 2008
992008
Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si
S Hertenberger, D Rudolph, S Bolte, M D÷blinger, M Bichler, D Spirkoska, ...
Applied Physics Letters 98 (12), 123114, 2011
892011
Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence
D Spirkoska, AL Efros, WRL Lambrecht, T Cheiwchanchamnangij, ...
Physical Review B 85 (4), 045309, 2012
712012
Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy
M Hei▀, E Riedlberger, D Spirkoska, M Bichler, G Abstreiter, AF i Morral
Journal of Crystal Growth 310 (6), 1049-1056, 2008
602008
Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core–shell nanowire transistors
S Morkötter, N Jeon, D Rudolph, B Loitsch, D Spirkoska, E Hoffmann, ...
Nano letters 15 (5), 3295-3302, 2015
592015
The use of molecular beam epitaxy for the synthesis of high purity III–V nanowires
D Spirkoska, C Colombo, M Heiss, G Abstreiter, AF i Morral
Journal of Physics: Condensed Matter 20 (45), 454225, 2008
402008
Free standing modulation doped core–shell GaAs/AlGaAs hetero‐nanowires
D Spirkoska, A Fontcuberta i Morral, J Dufouleur, Q Xie, G Abstreiter
physica status solidi (RRL)–Rapid Research Letters 5 (9), 353-355, 2011
332011
GaAs nanowires and related prismatic heterostructures
D Spirkoska, G Abstreiter, AF i Morral
Semiconductor science and technology 24 (11), 113001, 2009
292009
A.; Dufouleur, J.; Xie, Q.; Abstreiter, G
D Spirkoska, F i Morral
Phys. Status Solidi RRL 5, 353-355, 2011
142011
Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy
X Wang, I Zardo, D Spirkoska, S Yazji, KW Ng, WS Ko, ...
ACS nano 8 (11), 11440-11446, 2014
92014
Fontcuberta i Morral, a
C Colombo, D Spirkoska, M Frimmer, G Abstreiter
Phys. Rev. B 77, 2-6, 2008
92008
Growth methods and properties of high purity III-V nanowires by molecular beam epitaxy
D Spirkoska, C Colombo, M Hei▀, M Heigoldt, G Abstreiter, AF i Morral
Advances in Solid State Physics, 13-26, 2009
62009
Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires
D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ...
submitted for publication, 0
2
The system can't perform the operation now. Try again later.
Articles 1–20