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Ki-Sik Im
Ki-Sik Im
한국폴리텍대학 대구캠퍼스 조교수
Verified email at kopo.ac.kr
Title
Cited by
Cited by
Year
Normally off GaN MOSFET based on AlGaN/GaN heterostructure with extremely high 2DEG density grown on silicon substrate
KS Im, JB Ha, KW Kim, JS Lee, DS Kim, SH Hahm, JH Lee
IEEE Electron Device Letters 31 (3), 192-194, 2010
2002010
Effects of TMAH Treatment on Device Performance of Normally Off MOSFET
KW Kim, SD Jung, DS Kim, HS Kang, KS Im, JJ Oh, JB Ha, JK Shin, ...
IEEE electron device letters 32 (10), 1376-1378, 2011
1882011
High-performance GaN-based nanochannel FinFETs with/without AlGaN/GaN heterostructure
KS Im, CH Won, YW Jo, JH Lee, M Bawedin, S Cristoloveanu, JH Lee
IEEE Transactions on Electron Devices 60 (10), 3012-3018, 2013
1262013
Normally Off Single-NanoribbonMISFET
KS Im, RH Kim, KW Kim, DS Kim, CS Lee, S Cristoloveanu, JH Lee
IEEE Electron Device Letters 34 (1), 27-29, 2012
842012
AlGaN/GaN FinFET with extremely broad transconductance by side-wall wet etch
YW Jo, DH Son, CH Won, KS Im, JH Seo, IM Kang, JH Lee
IEEE Electron Device Letters 36 (10), 1008-1010, 2015
812015
Heterojunction-free GaN nanochannel FinFETs with high performance
KS Im, YW Jo, JH Lee, S Cristoloveanu, JH Lee
IEEE electron device letters 34 (3), 381-383, 2013
692013
Fabrication of AlGaN/GaN Ω-shaped nanowire fin-shaped FETs by a top-down approach
KS Im, V Sindhuri, YW Jo, DH Son, JH Lee, S Cristoloveanu, JH Lee
Applied Physics Express 8 (6), 066501, 2015
522015
AlGaN/GaN-based lateral-type Schottky barrier diode with very low reverse recovery charge at high temperature
JH Lee, C Park, KS Im, JH Lee
IEEE transactions on electron devices 60 (10), 3032-3039, 2013
452013
Characteristics of GaN and AlGaN/GaN FinFETs
KS Im, HS Kang, JH Lee, SJ Chang, S Cristoloveanu, M Bawedin, JH Lee
Solid-state electronics 97, 66-75, 2014
422014
Low voltage operation of GaN vertical nanowire MOSFET
DH Son, YW Jo, JH Seo, CH Won, KS Im, YS Lee, HS Jang, DH Kim, ...
Solid-State Electronics 145, 1-7, 2018
412018
Comparison for 1/ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET
S Vodapally, CG Theodorou, Y Bae, G Ghibaudo, S Cristoloveanu, KS Im, ...
IEEE Transactions on Electron Devices 64 (9), 3634-3638, 2017
392017
Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach
KS Im, CH Won, S Vodapally, R Caulmilone, S Cristoloveanu, YT Kim, ...
Applied Physics Letters 109 (14), 2016
362016
Normally-off AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistor with recessed gate and p-GaN back-barrier
DS Kim, KS Im, HS Kang, KW Kim, SB Bae, JK Mun, ES Nam, JH Lee
Japanese Journal of Applied Physics 51 (3R), 034101, 2012
322012
1/f-noise in AlGaN/GaN nanowire omega-FinFETs
S Vodapally, YI Jang, IM Kang, IT Cho, JH Lee, Y Bae, G Ghibaudo, ...
IEEE Electron Device Letters 38 (2), 252-254, 2016
292016
Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer
KS Im, CH Won, S Vodapally, DH Son, YW Jo, YH Park, JH Lee, JH Lee
Journal of Crystal Growth 441, 41-45, 2016
272016
Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET
DH Son, YW Jo, V Sindhuri, KS Im, JH Seo, YT Kim, IM Kang, ...
Microelectronic Engineering 147, 155-158, 2015
262015
Charge trapping and interface characteristics in normally-off Al2O3/GaN-MOSFETs
KW Kim, SD Jung, DS Kim, KS Im, HS Kang, JH Lee, Y Bae, DH Kwon, ...
Microelectronic engineering 88 (7), 1225-1227, 2011
262011
Low-frequency noise characteristics of GaN nanowire gate-all-around transistors with/without 2-DEG channel
KS Im, MSP Reddy, R Caulmilone, CG Theodorou, G Ghibaudo, ...
IEEE Transactions on Electron Devices 66 (3), 1243-1248, 2019
232019
Effect of gate structure on the trapping behavior of GaN junctionless FinFETs
KS Im, SJ An, CG Theodorou, G Ghibaudo, S Cristoloveanu, JH Lee
IEEE Electron Device Letters 41 (6), 832-835, 2020
212020
Performance improvement and sub-60 mV/decade swing in AlGaN/GaN FinFETs by simultaneous activation of 2DEG and sidewall MOS channels
Y Xu, S Cristoloveanu, M Bawedin, KS Im, JH Lee
IEEE Transactions on Electron Devices 65 (3), 915-920, 2018
192018
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