Christophe Hurni
Christophe Hurni
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Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation
CA Hurni, A David, MJ Cich, RI Aldaz, B Ellis, K Huang, A Tyagi, ...
Applied Physics Letters 106 (3), 031101, 2015
1932015
Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy
DA Browne, EC Young, JR Lang, CA Hurni, JS Speck
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30 (4 …, 2012
962012
Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction
R Yeluri, J Lu, CA Hurni, DA Browne, S Chowdhury, S Keller, JS Speck, ...
Applied Physics Letters 106 (18), 183502, 2015
792015
High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by -based molecular beam epitaxy
JR Lang, CJ Neufeld, CA Hurni, SC Cruz, E Matioli, UK Mishra, JS Speck
Applied Physics Letters 98 (13), 131115, 2011
772011
p-n junctions on Ga-face GaN grown by molecular beam epitaxy with low ideality factors and low reverse currents
CA Hurni, O Bierwagen, JR Lang, BM McSkimming, CS Gallinat, ...
Applied Physics Letters 97 (22), 222113, 2010
512010
Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling
A David, CA Hurni, NG Young, MD Craven
Applied Physics Letters 109 (8), 083501, 2016
442016
Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy
Z Zhang, CA Hurni, AR Arehart, J Yang, RC Myers, JS Speck, SA Ringel
Applied Physics Letters 100 (5), 052114, 2012
412012
High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes
A David, CA Hurni, RI Aldaz, MJ Cich, B Ellis, K Huang, FM Steranka, ...
Applied Physics Letters 105 (23), 231111, 2014
372014
All-optical measurements of carrier dynamics in bulk-GaN LEDs: Beyond the ABC approximation
A David, NG Young, CA Hurni, MD Craven
Applied Physics Letters 110 (25), 253504, 2017
362017
Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy
CA Hurni, JR Lang, PG Burke, JS Speck
Applied Physics Letters 101 (10), 102106, 2012
362012
Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source
M Hoi Wong, F Wu, CA Hurni, S Choi, JS Speck, UK Mishra
Applied Physics Letters 100 (7), 072107, 2012
342012
Quantum efficiency of III-nitride emitters: evidence for defect-assisted nonradiative recombination and its effect on the green gap
A David, NG Young, CA Hurni, MD Craven
Physical Review Applied 11 (3), 031001, 2019
332019
Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures
A David, CA Hurni, NG Young, MD Craven
Applied Physics Letters 109 (3), 033504, 2016
312016
Coherence in Y-coupled quantum cascade lasers
LK Hoffmann, CA Hurni, S Schartner, M Austerer, E Mujagić, M Nobile, ...
Applied Physics Letters 91 (16), 161106, 2007
312007
Field-assisted Shockley-Read-Hall recombinations in III-nitride quantum wells
A David, CA Hurni, NG Young, MD Craven
Applied Physics Letters 111 (23), 233501, 2017
302017
Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer
S Chowdhury, R Yeluri, C Hurni, UK Mishra, I Ben-Yaacov
US Patent 8,937,338, 2015
292015
Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures
B Mazumder, MH Wong, CA Hurni, JY Zhang, UK Mishra, JS Speck
Applied Physics Letters 101 (9), 091601, 2012
282012
Wavelength dependent phase locking in quantum cascade laser Y-junctions
LK Hoffmann, CA Hurni, S Schartner, E Mujagić, AM Andrews, P Klang, ...
Applied Physics Letters 92 (6), 061110, 2008
182008
Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy
Z Zhang, CA Hurni, AR Arehart, JS Speck, SA Ringel
Applied Physics Letters 101 (15), 152104, 2012
172012
High-performance LED fabrication
MJ Cich, AJF David, C Hurni, R Aldaz, MR Krames
US Patent 9,583,678, 2017
152017
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