Temperature dependence of current-and capacitance–voltage characteristics of an Au/4H-SiC Schottky diode M Gülnahar Superlattices and Microstructures 76, 394-412, 2014 | 51 | 2014 |
Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot M Gülnahar, H Efeoğlu Solid-state electronics 53 (9), 972-978, 2009 | 33 | 2009 |
Electrical characteristics of an Ag/n-InP Schottky diode based on temperature-dependent current–Voltage and capacitance–voltage measurements M Gülnahar Metallurgical and Materials Transactions A 46 (9), 3960-3971, 2015 | 24 | 2015 |
Porous Si based Al Schottky structures on p+-Si: a possible way for nano Schottky fabrication M Gülnahar, T Karacali, H Efeoğlu Electrochimica Acta 168, 41-49, 2015 | 23 | 2015 |
On the studies of capacitance-voltage-temperature and deep level characteristics of an Au/p-GaTe Schottky diode M Gülnahar, H Efeoğlu, M Şahin Journal of Alloys and Compounds 694, 1019-1025, 2017 | 12 | 2017 |
Current–Voltage and Capacitance–Conductance–Voltage Characteristics of Al/SiO2/p-Si and Al/Methyl Green (MG)/p-Si Structures S Duman, FS Ozcelik, B Gürbulak, M Gülnahar, A Turut Metallurgical and Materials Transactions A 46, 347-353, 2015 | 12 | 2015 |
Multiple-barrier distribution behavior of Mo/p-GaTe fabricated with sputtering M Gülnahar, H Efeoğlu Journal of alloys and compounds 509 (27), 7317-7323, 2011 | 11 | 2011 |
On the electrical and charge conduction properties of thermally evaporated MoO x on n-and p-type crystalline silicon M Gülnahar, H Nasser, A Salimi, R Turan Journal of Materials Science: Materials in Electronics 32, 1092-1104, 2021 | 8 | 2021 |
A simple procedure to simultaneously evaluate the thickness of and resistive losses in transmission lines from uncalibrated scattering parameter measurements UC Hasar, O Simsek, M Gulnahar Journal of Electromagnetic Waves and Applications 23 (8-9), 999-1010, 2009 | 8 | 2009 |
Characterization of electrical transport and properties of an Al/porous Si (PS)/p-Si/Al heterojunction M Gülnahar, T Karacali, H Efeoğlu Journal of Alloys and Compounds 797, 859-864, 2019 | 7 | 2019 |
Al-Au/GaTe Schottky yapıların sıcaklığa bağlı akım-gerilim (IVT) ve kapasite-gerilim (CVT) karakteristikleri M Gülnahar Doktora Tezi, Atatürk Üniversitesi, Fen Bilimleri Enstitüsü, Erzurum …, 2008 | 2 | 2008 |
Low temperature near band edge photoluminescence characterisation of GaTe H Efeoglu, M Gülnahar, B Abay, C Cosßkun, HS Güder Fırat Üniv Fen Müh Bilimleri Dergisi 13 (1), 173-8, 2001 | 2 | 2001 |
Analysis on the capacitance-voltage characteristics of metal-insulator-semiconductor capacitors based on thermally evaporated WOx on n-and p-type crystalline silicon M Gülnahar, H Mehmood, HH Canar, H Nasser Materials Science and Engineering: B 304, 117379, 2024 | | 2024 |
PID Control of Hybrid DC-DC Converter System in Complex Load with Double Reference Time E Can, M Gülnahar Tehnički glasnik 18 (1), 63-72, 2024 | | 2024 |
Electronic Properties of FLG/InP Schottky Contacts FEC ÇATIR, M Gülnahar Avrupa Bilim ve Teknoloji Dergisi, 6-11, 2023 | | 2023 |
Analysis on the capacitance-voltage characteristics of metal-insulator-semiconductor capacitors based on thermally evaporated WOx on n-and p-type crystalline silicon H Nasser, M Gülnahar, H Mehmood, HH Canar Available at SSRN 4040422, 2022 | | 2022 |
I-V-T Characteristics of Al/p-GaTe Schottky Contact Structure MGH Efeoğlu Balkan Physics Letters, 542-550, 2008 | | 2008 |
Tabakalı Gate yarı iletken bileşiğinin optik özelliklerini fotoluminesans tekniği ile incelenmesi M Gülnahar Fen Bilimleri Enstitüsü, 0 | | |