| A comprehensive model for ferroelectric FET capturing the key behaviors: Scalability, variation, stochasticity, and accumulation S Deng, G Yin, W Chakraborty, S Dutta, S Datta, X Li, K Ni 2020 IEEE symposium on VLSI technology, 1-2, 2020 | 76 | 2020 |
| A scalable design of multi-bit ferroelectric content addressable memory for data-centric computing C Li, F Müller, T Ali, R Olivo, M Imani, S Deng, C Zhuo, T Kämpfe, X Yin, ... 2020 IEEE International Electron Devices Meeting (IEDM), 29.3. 1-29.3. 4, 2020 | 66 | 2020 |
| Examination of the interplay between polarization switching and charge trapping in ferroelectric FET S Deng, Z Jiang, S Dutta, H Ye, W Chakraborty, S Kurinec, S Datta, K Ni 2020 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2020 | 46 | 2020 |
| Guidelines for ferroelectric FET reliability optimization: Charge matching S Deng, Z Liu, X Li, TP Ma, K Ni IEEE Electron Device Letters 41 (9), 1348-1351, 2020 | 38 | 2020 |
| On the channel percolation in ferroelectric FET towards proper analog states engineering K Ni, S Thomann, O Prakash, Z Zhao, S Deng, H Amrouch 2021 IEEE International Electron Devices Meeting (IEDM), 15.3. 1-15.3. 4, 2021 | 32 | 2021 |
| Impact of random spatial fluctuation in non-uniform crystalline phases on the device variation of ferroelectric FET C Garg, N Chauhan, S Deng, AI Khan, S Dasgupta, A Bulusu, K Ni IEEE Electron Device Letters 42 (8), 1160-1163, 2021 | 30 | 2021 |
| Unraveling the dynamics of charge trapping and de-trapping in ferroelectric FETs S Deng, Z Zhao, YS Kim, S Duenkel, D MacMahon, R Tiwari, ... IEEE Transactions on Electron Devices 69 (3), 1503-1511, 2022 | 27 | 2022 |
| Intrinsic synaptic plasticity of ferroelectric field effect transistors for online learning A Saha, ANM Islam, Z Zhao, S Deng, K Ni, A Sengupta Applied Physics Letters 119 (13), 2021 | 21 | 2021 |
| Depolarization Field Induced Instability of Polarization States in HfO2 Based Ferroelectric FET Z Wang, MM Islam, P Wang, S Deng, S Yu, AI Khan, K Ni 2020 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2020 | 16 | 2020 |
| Deep random forest with ferroelectric analog content addressable memory X Yin, F Müller, AF Laguna, C Li, W Ye, Q Huang, Q Zhang, Z Shi, ... arXiv preprint arXiv:2110.02495, 2021 | 15 | 2021 |
| On the write schemes and efficiency of FeFET 1T NOR array for embedded nonvolatile memory and beyond Y Xiao, Y Xu, Z Jiang, S Deng, Z Zhao, A Mallick, L Sun, R Joshi, X Li, ... 2022 International Electron Devices Meeting (IEDM), 13.6. 1-13.6. 4, 2022 | 11 | 2022 |
| Hardware functional obfuscation with ferroelectric active interconnects T Yu, Y Xu, S Deng, Z Zhao, N Jao, YS Kim, S Duenkel, S Beyer, K Ni, ... Nature communications 13 (1), 2235, 2022 | 11 | 2022 |
| An ultra-compact single fefet binary and multi-bit associative search engine X Yin, F Müller, Q Huang, C Li, M Imani, Z Yang, J Cai, M Lederer, R Olivo, ... arXiv preprint arXiv:2203.07948, 2022 | 11 | 2022 |
| An Ultracompact Single‐Ferroelectric Field‐Effect Transistor Binary and Multibit Associative Search Engine X Yin, F Müller, Q Huang, C Li, M Imani, Z Yang, J Cai, M Lederer, R Olivo, ... Advanced Intelligent Systems 5 (7), 2200428, 2023 | 9 | 2023 |
| Overview of ferroelectric memory devices and reliability aware design optimization S Deng, Z Zhao, S Kurinec, K Ni, Y Xiao, T Yu, V Narayanan Proceedings of the 2021 on Great Lakes Symposium on VLSI, 473-478, 2021 | 9 | 2021 |
| Compact ferroelectric programmable majority gate for compute-in-memory applications S Deng, M Benkhelifa, S Thomann, Z Faris, Z Zhao, TJ Huang, Y Xu, ... 2022 International Electron Devices Meeting (IEDM), 36.7. 1-36.7. 4, 2022 | 7 | 2022 |
| On the feasibility of 1t ferroelectric FET memory array Z Jiang, Z Zhao, S Deng, Y Xiao, Y Xu, H Mulaosmanovic, S Duenkel, ... IEEE Transactions on Electron Devices 69 (12), 6722-6730, 2022 | 6 | 2022 |
| Suppressing channel percolation in ferroelectric fet for reliable neuromorphic applications K Ni, O Prakash, S Thomann, Z Zhao, S Deng, H Amrouch 2022 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2022 | 6 | 2022 |
| Predictive modeling of ferroelectric tunnel junctions for memory and analog weight cell applications Y Xiao, S Deng, Z Zhao, V Narayanan, K Ni 2021 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2021 | 6 | 2021 |
| A homogeneous processing fabric for matrix-vector multiplication and associative search using ferroelectric time-domain compute-in-memory X Yin, Q Huang, F Müller, S Deng, A Vardar, S De, Z Jiang, M Imani, ... arXiv preprint arXiv:2209.11971, 2022 | 5 | 2022 |
Kai NiUniversity of Notre Damend.edu üzerinde doğrulanmış e-posta adresine sahip
