İlkay Demir

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ismail AltuntaşCumhuriyet UniversityVerified email at cumhuriyet.edu.tr
Sezai ElagözCumhuriyet UniversityVerified email at cumhuriyet.edu.tr
Emre GÜRProf., Department of Physics, Faculty of Science, Eskişehir Osmangazi University, 26480, MeşelikVerified email at ogu.edu.tr
Ahmet Emre KasapoğluAtatürk ÜniversityVerified email at atauni.edu.tr
Manijeh RazeghiNorthwestern UniversityVerified email at eecs.northwestern.edu
İzel PerkitelSivas Cumhuriyet University Nanophotonics Application and Research CenterVerified email at cumhuriyet.edu.tr
Merve Nur KOÇAKSivas Cumhuriyet University Nanophotonics Application and Research CenterVerified email at cumhuriyet.edu.tr
Gamze YolcuSivas Cumhuriyet University Nanophotonics Application and Research CenterVerified email at cumhuriyet.edu.tr
Ryan McClintockResearch Professor, Northwestern UniversityVerified email at northwestern.edu
Sabit HOROZSivas Bilim ve Teknoloji ÜniversitesiVerified email at sivas.edu.tr
Ebru Senadim TuzemenCumhuriyet ÜniversitesiVerified email at cumhuriyet.edu.tr
Kağan Murat PÜRLÜSivas Bilim ve Teknoloji ÜniversitesiVerified email at sivas.edu.tr
maaref hassenfaculté des sciences universite de monastir tunisiaVerified email at fsm.rnu.tn
Smiri BadreddinePhysicsVerified email at cea.fr
Qamar WaliNational University of Technology, Islamabad PakistanVerified email at nutech.edu.pk
Hasan Feyzi BUDAKAtatürk ÜniversitesiVerified email at atauni.edu.tr
Soheil MOBTAKERIPhDVerified email at ogr.atauni.edu.tr
Hongjian LiSolid State Lighting & Energy Electronics Center, UCSBVerified email at ucsb.edu
Muhammet GencTyndall National InstituteVerified email at tyndall.ie
Oğuz GülserenProfessor of Physics, Bilkent UniversityVerified email at fen.bilkent.edu.tr

İlkay Demir

Nanotechnology Engineering, Nanophotonics Research and Application Center, Cumhuriyet University

Verified email at cumhuriyet.edu.tr - Homepage

MOCVD Semiconductor Lasers III-Nitrides Crystal Growth Epitaxy


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Sandwich method to grow high quality AlN by MOCVD I Demir, H Li, Y Robin, R McClintock, S Elagoz, M Razeghi Journal of Physics D: Applied Physics 51 (8), 085104, 2018	40	2018
Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers MN Sharif, MA Khan, Q Wali, I Demir, F Wang, Y Liu Optics & Laser Technology 152, 108156, 2022	23	2022
Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy İ Demir, Y Robin, R McClintock, S Elagoz, K Zekentes, M Razeghi physica status solidi (a) 214 (4), 1600363, 2017	22	2017
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111) I Altuntas, MN Kocak, G Yolcu, HF Budak, AE Kasapoğlu, S Horoz, E Gür, ... Materials Science in Semiconductor Processing 127, 105733, 2021	19	2021
Optical and structural properties of In-rich InxGa1− xAs epitaxial layers on (1 0 0) InP for SWIR detectors B Smiri, MB Arbia, D Ilkay, F Saidi, Z Othmen, B Dkhil, A Ismail, E Sezai, ... Materials Science and Engineering: B 262, 114769, 2020	19	2020
V/III ratio effects on high quality InAlAs for quantum cascade laser structures I Demir, S Elagoz Superlattices and Microstructures 104, 140-148, 2017	19	2017
Interruption time effects on InGaAs/InAlAs superlattices of quantum cascade laser structures grown by MOCVD I Demir, S Elagoz Superlattices and Microstructures 100, 723-729, 2016	17	2016
High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate Y Robin, K Ding, I Demir, R McClintock, S Elagoz, M Razeghi Materials Science in Semiconductor Processing 90, 87-91, 2019	16	2019
Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs M Genç, V Sheremet, M Elçi, AE Kasapoğlu, İ Altuntaş, İ Demir, G Eğin, ... Superlattices and Microstructures 128, 9-13, 2019	14	2019
The effects of two stages HT-GaN growth with different V/III ratios during 3D-2D transition I Altuntas, I Demir, AE Kasapoğlu, S Mobtakeri, E Gür, S Elagoz Journal of Physics D: Applied Physics 51, 035105, 2018	14	2018
Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications I Demir, I Altuntas, B Bulut, M Ezzedini, Y Ergun, S Elagoz Semiconductor Science and Technology 33 (5), 055005, 2018	11	2018
The hydrostatic pressure and temperature effects on the binding energy of magnetoexcitons in cylindrical quantum well wires P Baser, HD Karki, I Demir, S Elagoz Superlattices and Microstructures 63, 100-109, 2013	11	2013
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy I Simsek, G Yolcu, MN Koçak, K Pürlü, I Altuntas, I Demir Journal of Materials Science: Materials in Electronics 32, 25507–25515, 2021	10	2021
AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn I Demir, Y Koçak, AE Kasapoğlu, M Razeghi, E Gür, S Elagoz Semiconductor Science and Technology 34 (7), 075028, 2019	10	2019
Growth of InGaAs/InAlAs superlattices by MOCVD and precise thickness determination via HRXRD I Demir, S Elagoz Gazi University Journal of Science 29 (4), 947-951, 2016	10	2016
In-situ and ex-situ face-to-face annealing of epitaxial AlN MN Koçak, KM Pürlü, İ Perkitel, İ Altuntaş, İ Demir Vacuum 203, 111284, 2022	8	2022
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE KM Pürlü, MN Kocak, G Yolcu, I Perkitel, İ Altuntaş, I Demir Materials Science in Semiconductor Processing 142, 106464, 2022	8	2022
The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN İ PERKİTEL, İ ALTUNTAS, İ DEMİR Gazi University Journal of Science 35 (1), 281-291, 2022	8	2022
Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas I Demir, I Altuntas, AE Kasapoğlu, S Mobtakeri, E Gür, S Elagoz Semiconductors 52 (16), 2030-2038, 2018	8	2018
Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures I Demir, AE Kasapoğlu, HF Budak, E Gür, S Elagoz The European Physical Journal Applied Physics 90 (2), 20301, 2020	6	2020

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