Dielectric properties of MS diodes with Ag: ZnO doped PVP interfacial layer depending on voltage and frequency MU S. Altındal Yerişkin, E. Eebilen Tanrıkulu Materials Chemistry and Physics 303, 2023 | 39 | 2023 |
Examination onthe current conduction mechanisms of Au/n-Si diodes with ZnO–PVP and ZnO/Ag2WO4–PVP interfacial layers YAK İ Taşçıoğlu, G Pirgholi-Givi, S. Altındal Yerişkin Journal of Sol-Gel Science and Technology, 536-547, 2023 | 27 | 2023 |
Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure MB D. Ata, S. Altındal Yeriskin, A. Tataroğlu Journal of Physics and Chemistry of Solids, 2022 | 26 | 2022 |
Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanism (CMs) in the Au/n-Si (MS) structures at room temperature A Yerişkin Iğdır University Journal of the Institute of Science and Technology 9, 835-846, 2019 | 17 | 2019 |
Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd0.3Zn0.7O) interfacial layer in the wide range of frequency and … İT N Delen, S. Altındal Yerişkin, A. Özbay Physica B: Condensed Matter, 2023 | 13 | 2023 |
Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range SAY A. Buyukbas-Ulusan, A. Tataroglu ECS Journal of Solid State Science and Technology 12 (083010), 2023 | 11 | 2023 |
Dielectric, ac conductivity and electric modulus studies at MPS structure with (Cu2O-CuO)-doped PVA interfacial layer YAK A. Buyukbas-Ulusan, S. Altındal-Yerişkin, A. Tataroglu, M. Balbasi Optoelectronics and Advanced Materials- Rapid Communications 14, 256-260, 2020 | 4 | 2020 |
Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure MB D. Ata, S. Altındal Yeriskin, A. Tataroğlu Journal of Physics and Chemistry of Solids 169, 110861, 2022 | | 2022 |