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Title
Cited by
Cited by
Year
Dielectric properties of MS diodes with Ag: ZnO doped PVP interfacial layer depending on voltage and frequency
MU S. Altındal Yerişkin, E. Eebilen Tanrıkulu
Materials Chemistry and Physics 303, 2023
392023
Examination onthe current conduction mechanisms of Au/n-Si diodes with ZnO–PVP and ZnO/Ag2WO4–PVP interfacial layers
YAK İ Taşçıoğlu, G Pirgholi-Givi, S. Altındal Yerişkin
Journal of Sol-Gel Science and Technology, 536-547, 2023
272023
Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure
MB D. Ata, S. Altındal Yeriskin, A. Tataroğlu
Journal of Physics and Chemistry of Solids, 2022
262022
Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanism (CMs) in the Au/n-Si (MS) structures at room temperature
A Yerişkin
Iğdır University Journal of the Institute of Science and Technology 9, 835-846, 2019
172019
Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd0.3Zn0.7O) interfacial layer in the wide range of frequency and …
İT N Delen, S. Altındal Yerişkin, A. Özbay
Physica B: Condensed Matter, 2023
132023
Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range
SAY A. Buyukbas-Ulusan, A. Tataroglu
ECS Journal of Solid State Science and Technology 12 (083010), 2023
112023
Dielectric, ac conductivity and electric modulus studies at MPS structure with (Cu2O-CuO)-doped PVA interfacial layer
YAK A. Buyukbas-Ulusan, S. Altındal-Yerişkin, A. Tataroglu, M. Balbasi
Optoelectronics and Advanced Materials- Rapid Communications 14, 256-260, 2020
42020
Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure
MB D. Ata, S. Altındal Yeriskin, A. Tataroğlu
Journal of Physics and Chemistry of Solids 169, 110861, 2022
2022
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