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Ji-Hyeon PARK
Ji-Hyeon PARK
Korea Institute of Ceramic Engineering and Technology
Verified email at kicet.re.kr
Title
Cited by
Cited by
Year
Coaxial InxGa1–xN/GaN Multiple Quantum Well Nanowire Arrays on Si(111) Substrate for High-Performance Light-Emitting Diodes
YH Ra, R Navamathavan, JH Park, CR Lee
Nano letters 13 (8), 3506-3516, 2013
1172013
A review of the growth, doping, and applications of Beta-Ga2O3 thin films
M Razeghi, JH Park, R McClintock, D Pavlidis, FH Teherani, DJ Rogers, ...
oxide-based materials and devices IX 10533, 21-44, 2018
752018
High-Quality Uniaxial InxGa1–xN/GaN Multiple Quantum Well (MQW) Nanowires (NWs) on Si(111) Grown by Metal-Organic Chemical Vapor Deposition …
YH Ra, R Navamathavan, JH Park, CR Lee
ACS applied materials & interfaces 5 (6), 2111-2117, 2013
612013
Strain-Induced Metastable Phase Stabilization in Ga2O3 Thin Films
Y Xu, JH Park, Z Yao, C Wolverton, M Razeghi, J Wu, VP Dravid
ACS applied materials & interfaces 11 (5), 5536-5543, 2019
512019
III-nitride nanowires for solar light harvesting: A review
U Chatterjee, JH Park, DY Um, CR Lee
Renewable and Sustainable Energy Reviews 79, 1002-1015, 2017
462017
Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD
JH Park, R McClintock, M Razeghi
Semiconductor Science and Technology 34 (8), 08LT01, 2019
452019
MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire
JH Park, R McClintock, A Jaud, A Dehzangi, M Razeghi
Applied Physics Express 12 (9), 095503, 2019
282019
Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition
S Kang, A Mandal, JH Chu, JH Park, SY Kwon, CR Lee
Scientific reports 5 (1), 10808, 2015
282015
High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3
J Bae, DW Jeon, JH Park, J Kim
Journal of Vacuum Science & Technology A 39 (3), 2021
272021
Self-powered solar-blind α-Ga2O3 thin-film UV-C photodiode grown by halide vapor-phase epitaxy
J Bae, JH Park, DW Jeon, J Kim
APL Materials 9 (10), 2021
242021
Highly uniform characteristics of GaN nanorods grown on Si (111) by metalorganic chemical vapor deposition
YH Ra, R Navamathavan, JH Park, KY Song, YM Lee, DW Kim, BB Jun, ...
Japanese Journal of Applied Physics 49 (9R), 091003, 2010
222010
A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure
JH Park, R Nandi, JK Sim, DY Um, S Kang, JS Kim, CR Lee
RSC advances 8 (37), 20585-20592, 2018
192018
Hydrogen generation using non-polar coaxial InGaN/GaN multiple quantum well structure formed on hollow n-GaN nanowires
JH Park, A Mandal, S Kang, U Chatterjee, JS Kim, BG Park, MD Kim, ...
Scientific Reports 6 (1), 31996, 2016
192016
Radial growth behavior and characteristics of m-plane In 0.16 Ga 0.84 N/GaN MQW nanowires by MOCVD
YH Ra, R Navamathavan, JH Park, CR Lee
CrystEngComm 15 (10), 1874-1881, 2013
192013
Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition
C Jia, DW Jeon, J Xu, X Yi, JH Park, Y Zhang
Nanomaterials 10 (6), 1031, 2020
162020
Growth behavior of GaN epilayers on Si (111) grown by GaN nanowires assisted epitaxial lateral overgrowth
BR Yeom, R Navamathavan, JH Park, YH Ra, CR Lee
CrystEngComm 14 (17), 5558-5563, 2012
152012
H trapping at the metastable cation vacancy in α-Ga2O3 and α-Al2O3
A Venzie, A Portoff, M Stavola, WB Fowler, J Kim, DW Jeon, JH Park, ...
Applied Physics Letters 120 (19), 2022
122022
Vertically p–n-junctioned GaN nano-wire array diode fabricated on Si (111) using MOCVD
JH Park, MH Kim, S Kissinger, CR Lee
Nanoscale 5 (7), 2959-2966, 2013
122013
Single β-Ga2O3 nanowire based lateral FinFET on Si
S Xu, L Liu, G Qu, X Zhang, C Jia, S Wu, Y Ma, YJ Lee, G Wang, JH Park, ...
Applied Physics Letters 120 (15), 2022
112022
Correlation of pulsed gas flow on Si-doped α-Ga2O3 epilayer grown by halide vapor phase epitaxy
H Son, Y Choi, JH Park, B Ryu, DW Jeon
ECS Journal of Solid State Science and Technology 9 (5), 055005, 2020
112020
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