Robust memristors based on layered two-dimensional materials M Wang, S Cai, C Pan, C Wang, X Lian, Y Zhuo, K Xu, T Cao, X Pan, ... Nature Electronics 1 (2), 130-136, 2018 | 616 | 2018 |
Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions C Pan, CY Wang, SJ Liang, Y Wang, T Cao, P Wang, C Wang, S Wang, ... Nature Electronics 3 (7), 383-390, 2020 | 218 | 2020 |
Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures A Gao, J Lai, Y Wang, Z Zhu, J Zeng, G Yu, N Wang, W Chen, T Cao, ... Nature nanotechnology 14 (3), 217-222, 2019 | 181 | 2019 |
Negative photoconductance in van der Waals heterostructure-based floating gate phototransistor Y Wang, E Liu, A Gao, T Cao, M Long, C Pan, L Zhang, J Zeng, C Wang, ... ACS nano 12 (9), 9513-9520, 2018 | 135 | 2018 |
Low‐Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning S Hao, J Zeng, T Xu, X Cong, C Wang, C Wu, Y Wang, X Liu, T Cao, G Su, ... Advanced Functional Materials 28 (36), 1803746, 2018 | 81 | 2018 |
Experimental identification of critical condition for drastically enhancing thermoelectric power factor of two-dimensional layered materials J Zeng, X He, SJ Liang, E Liu, Y Sun, C Pan, Y Wang, T Cao, X Liu, ... Nano Letters 18 (12), 7538-7545, 2018 | 79 | 2018 |
Proximity-Induced Superconductivity with Subgap Anomaly in Type II Weyl Semi-Metal WTe2 Q Li, C He, Y Wang, E Liu, M Wang, Y Wang, J Zeng, Z Ma, T Cao, C Yi, ... Nano letters 18 (12), 7962-7968, 2018 | 54 | 2018 |
Tuning Electrical Conductance in Bilayer MoS2 through Defect-Mediated Interlayer Chemical Bonding L Zhang, G Wang, Y Zhang, Z Cao, Y Wang, T Cao, C Wang, B Cheng, ... ACS nano 14 (8), 10265-10275, 2020 | 44 | 2020 |
Robust impact-ionization field-effect transistor based on nanoscale vertical graphene/black phosphorus/indium selenide heterostructures A Gao, Z Zhang, L Li, B Zheng, C Wang, Y Wang, T Cao, Y Wang, ... ACS nano 14 (1), 434-441, 2019 | 36 | 2019 |
Gate-tunable weak antilocalization in a few-layer InSe J Zeng, SJ Liang, A Gao, Y Wang, C Pan, C Wu, E Liu, L Zhang, T Cao, ... Physical Review B 98 (12), 125414, 2018 | 32 | 2018 |
Edge‐Epitaxial Growth of InSe Nanowires toward High‐Performance Photodetectors S Hao, S Yan, Y Wang, T Xu, H Zhang, X Cong, L Li, X Liu, T Cao, A Gao, ... Small 16 (4), 1905902, 2020 | 23 | 2020 |
Approaching the intrinsic threshold breakdown voltage and ultrahigh gain in a graphite/InSe Schottky photodetector Z Zhang, B Cheng, J Lim, A Gao, L Lyu, T Cao, S Wang, ZA Li, Q Wu, ... Advanced Materials 34 (47), 2206196, 2022 | 19 | 2022 |
Temperature-sensitive spatial distribution of defects in flakes X Liu, Y Wang, Q Guo, SJ Liang, T Xu, B Liu, J Qiao, S Lai, J Zeng, S Hao, ... Physical Review Materials 5 (4), L041001, 2021 | 12 | 2021 |
Cascadable in-memory computing based on symmetric writing and readout L Wang, J Xiong, B Cheng, Y Dai, F Wang, C Pan, T Cao, X Liu, P Wang, ... Science Advances 8 (49), eabq6833, 2022 | 11 | 2022 |
Chemical vapor deposition synthesis of two-dimensional freestanding transition metal oxychloride for electronic applications S Yan, P Wang, CY Wang, T Xu, Z Li, T Cao, M Chen, C Pan, B Cheng, ... Science China Information Sciences 62, 1-9, 2019 | 5 | 2019 |
On-device phase engineering X Liu, J Shan, T Cao, L Zhu, J Ma, G Wang, Z Shi, Q Yang, M Ma, Z Liu, ... Nature Materials, 1-7, 2024 | | 2024 |
Anisotropic metal-insulator transition in strained VO2(B) single crystal Z Ma, S Yan, Z Liu, T Xu, F Chen, S Chen, T Cao, L Sun, B Cheng, ... Chinese Physics B, 2024 | | 2024 |
Improving the Electrical Performances of InSe Transistor by Interface Engineering T Cao, S Hao, C Wu, C Pan, Y Dai, B Cheng, S Liang, F Miao Chinese Physics B, 2024 | | 2024 |
Robust memristors based on layered two-dimensional materials (vol 1, pg 130, 2018) M Wang, S Cai, C Pan, C Wang, X Lian, Y Zhuo, K Xu, T Cao, X Pan, ... NATURE ELECTRONICS 1 (3), 203-203, 2018 | | 2018 |