| Advanced thin-film silicon-on-sapphire technology: Microwave circuit applications RA Johnson, PR de la Houssaye, CE Chang, PF Chen, ME Wood, ... IEEE Transactions on electron devices 45 (5), 1047-1054, 1998 | 128 | 1998 |
| Microsensor System and Method for Measuring Data HWW Stephen D. Russell, Paul R. de la Houssaye, Jamie Kathleen Pugh, William ... US Patent 7,383,071, 2008 | 75* | 2008 |
| Laterally Disposed Nanostructures of Silicon on an Insulating Substrate SD Russell, RC Dynes, PR de la Houssaye, WB Dubbelday, ... US Patent 5,962,863, 1999 | 75 | 1999 |
| Photonic silicon on a transparent substrate SD Russell, WB Dubbelday, RL Shimabukuro, PR de la Houssaye, ... US Patent 6,093,941, 2000 | 61 | 2000 |
| Future trends in microelectronics: the nano millennium S Luryi, J Xu, A Zaslavsky (No Title), 2002 | 58 | 2002 |
| A 26.5 GHz silicon MOSFET 2: 1 dynamic frequency divider M Wetzel, L Shi, KA Jenkins, PR de la Houssaye, Y Taur, PM Asbeck, ... IEEE Microwave and Guided Wave Letters 10 (10), 421-423, 2000 | 43 | 2000 |
| Microwave performance of optically fabricated T-gate thin film silicon-on-sapphire based MOSFET's PR De la Houssaye, CE Chang, B Offord, G Imthurn, R Johnson, ... IEEE Electron Device Letters 16 (6), 289-292, 1995 | 43 | 1995 |
| SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax SJ Koester, R Hammond, JO Chu, PM Mooney, JA Ott, L Perraud, ... IEEE Electron Device Letters 22 (2), 92-94, 2001 | 41 | 2001 |
| Laterally Disposed Nanostructures of Silicon on an Insulating Substrate SD Russell, RC Dynes, PR de la Houssaye, WB Dubbelday, ... US Patent 6,103,540, 2000 | 38 | 2000 |
| Microsensor System and Method for Measuring Data SD Russell, PR de la Houssaye, JK Pugh, W Pugh, DE Amundson, ... US Patent 7,297,113, 2007 | 35 | 2007 |
| Method for making silicon germanium alloy and electronic device structures IL Wadad B. Dubbelday, Paul R. de la Houssaye, Shannon D. Kasa US Patent 5,951,757, 1999 | 33 | 1999 |
| Electron saturation velocity variation in InGaAs and GaAs channel MODFETs for gate length to 550 AA PR De La Houssaye, DR Allee, Y Pao, DG Schlom, JS Harris, RFW Pease IEEE electron device letters 9 (3), 148-150, 1988 | 24 | 1988 |
| Microelectomechanical Gas Concentrator PR de la Houssaye US Patent 6,517,610, 2003 | 23 | 2003 |
| Hall mobility and carrier concentration versus temperature for type IIa natural insulating diamond doped with boron by ion implantation PR de La Houssaye, CM Penchina, CA Hewett, JR Zeidler, RG Wilson Journal of applied physics 71 (7), 3220-3224, 1992 | 22 | 1992 |
| Sub‐100‐nm gate length GaAs metal–semiconductor field‐effect transistors and modulation‐doped field‐effect transistors fabricated by a combination of molecular‐beam epitaxy and … DR Allee, PR de La Houssaye, DG Schlom, JS Harris, RFW Pease Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1988 | 20* | 1988 |
| Microsensor array system SD Russell, PR de la Houssaye, JK Pugh, W Pugh, DE Amundson, ... US Patent 8,057,388, 2011 | 18 | 2011 |
| High-mobility fully depleted thin-film SOS MOSFET's M Roser, SR Clayton, PR de La Houssaye, GA Garcia IEEE Transactions on Electron Devices 39 (11), 2665-2666, 1992 | 18 | 1992 |
| Effect of thermal treatment on the mechanical and structural properties of gold thin films CK Malek, B Kebabi, A Charai, PR de la Houssaye Journal of Vacuum Science and Technology B 9 (6), 3329-3332, 1991 | 18 | 1991 |
| A 2.4-GHz silicon-on-sapphire CMOS low-noise amplifier RA Johnson, CE Chang, PR De la Houssaye, ME Wood, GA Garcia, ... IEEE microwave and guided wave letters 7 (10), 350-352, 1997 | 17 | 1997 |
| Demonstration of Y1Ba2Cu3O7−δ and complementary metal‐oxide‐semiconductor device fabrication on the same sapphire substrate MJ Burns, PR De La Houssaye, SD Russell, GA Garcia, SR Clayton, ... Applied physics letters 63 (9), 1282-1284, 1993 | 16 | 1993 |
