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Jorge Kittl
Jorge Kittl
Vice President Samsung, Prof. KU Leuven
Verified email at samsung.com
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Cited by
Cited by
Year
10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
8972011
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
2942009
Balancing SET/RESET Pulse forEndurance in1T1R Bipolar RRAM
YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
2102012
Complete experimental test of kinetic models for rapid alloy solidification
JA Kittl, PG Sanders, MJ Aziz, DP Brunco, MO Thompson
Acta materialia 48 (20), 4797-4811, 2000
1572000
Ni-and Co-based silicides for advanced CMOS applications
JA Kittl, A Lauwers, O Chamirian, M Van Dal, A Akheyar, M De Potter, ...
Microelectronic Engineering 70 (2-4), 158-165, 2003
1482003
Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n+ type polycrystalline silicon lines
JA Kittl, DA Prinslow, PP Apte, MF Pas
Applied physics letters 67 (16), 2308-2310, 1995
1221995
Dynamic ‘hour glass’ model for SET and RESET in HfO2RRAM
R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012
1182012
Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
L Goux, K Opsomer, R Degraeve, R Müller, C Detavernier, DJ Wouters, ...
Applied Physics Letters 99 (5), 2011
1162011
International Electron Devices Meeting
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Washington DC 31 (1), 2011
1162011
Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition
G Rampelberg, M Schaekers, K Martens, Q Xie, D Deduytsche, ...
Applied Physics Letters 98 (16), 2011
1102011
SoC logic compatible multi-bit FeMFET weight cell for neuromorphic applications
K Ni, JA Smith, B Grisafe, T Rakshit, B Obradovic, JA Kittl, M Rodder, ...
2018 IEEE International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2018
1062018
High current effects in silicide films for sub-0.25/spl mu/m VLSI technologies
K Banerjee, C Hu, A Amerasekera, JA Kittl
1998 IEEE International Reliability Physics Symposium Proceedings. 36th …, 1998
941998
Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering
L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ...
2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012
902012
Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures
A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ...
2012 4th IEEE International Memory Workshop, 1-4, 2012
882012
Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies
JA Kittl, QZ Hong
Thin Solid Films 320 (1), 110-121, 1998
871998
Ni based silicides for 45 nm CMOS and beyond
A Lauwers, JA Kittl, MJH Van Dal, O Chamirian, MA Pawlak, M de Potter, ...
Materials Science and Engineering: B 114, 29-41, 2004
852004
A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
S Yu, Y Yin Chen, X Guan, HS Philip Wong, JA Kittl
Applied Physics Letters 100 (4), 2012
832012
Work function of Ni silicide phases on HfSiON and SiO/sub 2: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates
JA Kittl, MA Pawlak, A Lauwers, C Demeurisse, K Opsomer, KG Anil, ...
IEEE electron device letters 27 (1), 34-36, 2005
832005
Nonequilibrium partitioning during rapid solidification of Si As alloys
JA Kittl, MJ Aziz, DP Brunco, MO Thompson
Journal of crystal growth 148 (1-2), 172-182, 1995
811995
Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments
R Degraeve, P Roussel, L Goux, D Wouters, J Kittl, L Altimime, M Jurczak, ...
2010 International Electron Devices Meeting, 28.4. 1-28.4. 4, 2010
802010
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