| Mechanical properties of molybdenum disulfide and the effect of doping: an in situ TEM study AA Tedstone, DJ Lewis, R Hao, SM Mao, P Bellon, RS Averback, ... ACS applied materials & interfaces 7 (37), 20829-20834, 2015 | 60 | 2015 |
| Defect reduction processes in heteroepitaxial non-polar a-plane GaN films R Hao, MJ Kappers, MA Moram, CJ Humphreys Journal of crystal growth 337 (1), 81-86, 2011 | 15 | 2011 |
| Defect reduction in semi-polar (1122) gallium nitride grown using epitaxial lateral overgrowth T Zhu, D Sutherland, TJ Badcock, R Hao, MA Moram, P Dawson, ... Japanese Journal of Applied Physics 52 (8S), 08JB01, 2013 | 11 | 2013 |
| The effects of annealing on non-polar (1 1 2 0) a-plane GaN films R Hao, T Zhu, M Häberlen, TY Chang, MJ Kappers, RA Oliver, ... Journal of crystal growth 312 (23), 3536-3543, 2010 | 10 | 2010 |
| Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells TJ Badcock, R Hao, MA Moram, MJ Kappers, P Dawson, RA Oliver, ... Journal of Applied Physics 112 (1), 2012 | 9 | 2012 |
| The effect of dislocation density and surface morphology on the optical properties of InGaN/GaN quantum wells grown on r-plane sapphire substrates TJ Badcock, R Hao, MA Moram, MJ Kappers, P Dawson, CJ Humphreys Japanese Journal of Applied Physics 50 (8R), 080201, 2011 | 6 | 2011 |
| On the origin of blue‐green emission from heteroepitaxial nonpolar a‐plane InGaN quantum wells MJ Kappers, TJ Badcock, R Hao, MA Moram, S Hammersley, P Dawson, ... physica status solidi c 9 (3‐4), 465-468, 2012 | 4 | 2012 |
| The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates TJ Badcock, R Hao, MA Moram, P Dawson, MJ Kappers, CJ Humphreys physica status solidi (a) 208 (7), 1529-1531, 2011 | 4 | 2011 |
| Properties of surface‐pit related emission in a ‐plane InGaN/GaN quantum wells grown on r ‐plane sapphire TJ Badcock, R Hao, MA Moram, P Dawson, MJ Kappers, CJ Humphreys physica status solidi c 8 (7‐8), 2179-2181, 2011 | 2 | 2011 |
| Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire TJ Badcock, MJ Kappers, MA Moram, R Hao, P Dawson, CJ Humphreys physica status solidi (b) 249 (3), 494-497, 2012 | 1 | 2012 |
| The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates TJ Badcock, R Hao, MA Moram, MJ Kappers, P Dawson, CJ Humphreys Japanese Journal of Applied Physics 52, 080201, 2013 | | 2013 |
| Rapid Communications-080201 The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates TJ Badcock, R Hao, MA Moram, MJ Kappers, P Dawson, CJ Humphreys Japanese Journal of Applied Physics 50 (8), 2011 | | 2011 |
Michelle MoramSenior Lecturer and Royal Society University Research Fellow, Imperial College LondonVerified email at imperial.ac.uk
