A cubic-millimeter energy-autonomous wireless intraocular pressure monitor G Chen, H Ghaed, R Haque, M Wieckowski, Y Kim, G Kim, D Fick, D Kim, ... 2011 IEEE International Solid-State Circuits Conference, 310-312, 2011 | 271 | 2011 |
Millimeter-scale nearly perpetual sensor system with stacked battery and solar cells G Chen, M Fojtik, D Kim, D Fick, J Park, M Seok, MT Chen, Z Foo, ... 2010 IEEE International Solid-State Circuits Conference-(ISSCC), 288-289, 2010 | 264 | 2010 |
A low-voltage processor for sensing applications with picowatt standby mode S Hanson, M Seok, YS Lin, ZY Foo, D Kim, Y Lee, N Liu, D Sylvester, ... IEEE Journal of Solid-State Circuits 44 (4), 1145-1155, 2009 | 221 | 2009 |
The Phoenix Processor: A 30pW platform for sensor applications M Seok, S Hanson, YS Lin, Z Foo, D Kim, Y Lee, N Liu, D Sylvester, ... 2008 IEEE Symposium on VLSI Circuits, 188-189, 2008 | 218 | 2008 |
Circuits for a cubic-millimeter energy-autonomous wireless intraocular pressure monitor MH Ghaed, G Chen, R Haque, M Wieckowski, Y Kim, G Kim, Y Lee, I Lee, ... IEEE Transactions on Circuits and Systems I: Regular Papers 60 (12), 3152-3162, 2013 | 134 | 2013 |
A millimeter-scale energy-autonomous sensor system with stacked battery and solar cells M Fojtik, D Kim, G Chen, YS Lin, D Fick, J Park, M Seok, MT Chen, Z Foo, ... IEEE Journal of Solid-State Circuits 48 (3), 801-813, 2013 | 131 | 2013 |
Centip3De: A 3930DMIPS/W configurable near-threshold 3D stacked system with 64 ARM Cortex-M3 cores D Fick, RG Dreslinski, B Giridhar, G Kim, S Seo, M Fojtik, S Satpathy, ... 2012 IEEE International Solid-State Circuits Conference, 190-192, 2012 | 116 | 2012 |
Low power circuit design based on heterojunction tunneling transistors (HETTs) D Kim, Y Lee, J Cai, I Lauer, L Chang, SJ Koester, D Sylvester, D Blaauw Proceedings of the 2009 ACM/IEEE international symposium on Low power …, 2009 | 102 | 2009 |
A 23.6-Mb/mm SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications Z Guo, D Kim, S Nalam, J Wiedemer, X Wang, E Karl IEEE Journal of Solid-State Circuits 54 (1), 210-216, 2018 | 63 | 2018 |
Centip3De: A cluster-based NTC architecture with 64 ARM Cortex-M3 cores in 3D stacked 130 nm CMOS D Fick, RG Dreslinski, B Giridhar, G Kim, S Seo, M Fojtik, S Satpathy, ... IEEE Journal of Solid-State Circuits 48 (1), 104-117, 2012 | 63 | 2012 |
17.1 a 0.6 v 1.5 ghz 84mb sram design in 14nm finfet cmos technology E Karl, Z Guo, JW Conary, JL Miller, YG Ng, S Nalam, D Kim, J Keane, ... 2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of …, 2015 | 60 | 2015 |
Centip3De: A 64-core, 3D stacked near-threshold system RG Dreslinski, D Fick, B Giridhar, G Kim, S Seo, M Fojtik, S Satpathy, ... IEEE Micro 33 (2), 8-16, 2013 | 55 | 2013 |
A 0.6 V, 1.5 GHz 84 Mb SRAM in 14 nm FinFET CMOS technology with capacitive charge-sharing write assist circuitry E Karl, Z Guo, J Conary, J Miller, YG Ng, S Nalam, D Kim, J Keane, ... IEEE Journal of Solid-State Circuits 51 (1), 222-229, 2015 | 53 | 2015 |
A 1.85 fW/bit ultra low leakage 10T SRAM with speed compensation scheme D Kim, G Chen, M Fojtik, M Seok, D Blaauw, D Sylvester 2011 IEEE International Symposium of Circuits and Systems (ISCAS), 69-72, 2011 | 51 | 2011 |
Variation-aware static and dynamic writability analysis for voltage-scaled bit-interleaved 8-T SRAMs D Kim, V Chandra, R Aitken, D Blaauw, D Sylvester IEEE/ACM International Symposium on Low Power Electronics and Design, 145-150, 2011 | 33 | 2011 |
Memory device and method of controlling a write operation within a memory device V Chandra, D Kim US Patent 8,363,484, 2013 | 16 | 2013 |
Centip3De: a many-core prototype exploring 3D integration and near-threshold computing RG Dreslinski, D Fick, B Giridhar, G Kim, S Seo, M Fojtik, S Satpathy, ... Communications of the ACM 56 (11), 97-104, 2013 | 13 | 2013 |
A dense 45nm half-differential SRAM with lower minimum operating voltage G Chen, M Wieckowski, D Kim, D Blaauw, D Sylvester 2011 IEEE International Symposium of Circuits and Systems (ISCAS), 57-60, 2011 | 11 | 2011 |
A 128kb high density portless SRAM using hierarchical bitlines and thyristor sense amplifiers M Wieckowski, GK Chen, D Kim, D Blaauw, D Sylvester Quality Electronic Design (ISQED), 2011 12th International Symposium on, 1-4, 2011 | 10 | 2011 |
10-nm SRAM Design Using Gate-Modulated Self-Collapse Write-Assist Enabling 175-mV VMIN Reduction With Negligible Active Power Overhead Z Guo, J Wiedemer, Y Kim, PS Ramamoorthy, PB Sathyaprasad, ... IEEE Solid-State Circuits Letters 4, 6-9, 2020 | 8 | 2020 |