| Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs W Li, B Romanczyk, M Guidry, E Akso, N Hatui, C Wurm, W Liu, ... IEEE Transactions on Electron Devices 70 (4), 2075-2080, 2023 | 18 | 2023 |
| Novel all-around diamond integration with GaN HEMTs demonstrating highly efficient device cooling R Soman, M Malakoutian, B Shankar, D Field, E Akso, N Hatui, NJ Hines, ... 2022 International Electron Devices Meeting (IEDM), 30.8. 1-30.8. 4, 2022 | 10 | 2022 |
| First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz E Akso, H Collins, C Clymore, W Li, M Guidry, B Romanczyk, C Wurm, ... IEEE Microwave and Wireless Technology Letters, 2023 | 9 | 2023 |
| Record 94 GHz performance from N-polar GaN-on-sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE W Li, B Romanczyk, E Akso, M Guidry, N Hatui, C Wurm, W Liu, ... 2022 International Electron Devices Meeting (IEDM), 11.2. 1-11.2. 4, 2022 | 8 | 2022 |
| Surrogate modeling and variability analysis of on‐chip spiral inductors E Akso, ÝB Soysal, MB Yelten International Journal of Numerical Modelling: Electronic Networks, Devices …, 2017 | 7 | 2017 |
| Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz E Akso, C Clymore, W Liu, H Collins, B Romanczyk, W Li, N Hatui, ... 2023 Device Research Conference (DRC), 1-2, 2023 | 3 | 2023 |
| First comparison of active and passive load pull at W-band CJ Clymore, E Akso, M Guidry, H Collins, W Liu, C Wurm, N Hatui, ... 2023 101st ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2023 | 2 | 2023 |
| Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz E Akso, H Collins, K Khan, B Wang, W Li, C Clymore, E Kayede, W Liu, ... IEEE Microwave and Wireless Technology Letters, 2024 | 1 | 2024 |
| First Demonstration of an N-Polar InAlGaN/GaN HEMT R Hamwey, N Hatui, E Akso, F Wu, C Clymore, S Keller, JS Speck, ... IEEE Electron Device Letters, 2023 | 1 | 2023 |
| A variability analysis algorithm for spiral inductors using enhanced single-π model ÝB Soysal, E Akso, MB Yelten 2016 National Conference on Electrical, Electronics and Biomedical …, 2016 | 1 | 2016 |
| Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz E Akso, W Li, C Clymore, E O’Malley, M Guidry, J Kim, B Romanczyk, ... IEEE Microwave and Wireless Technology Letters, 2024 | | 2024 |
| N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz H Collins, E Akso, N Hatui, CJ Clymore, C Wurm, R Hamwey, M Guidry, ... IEEE Microwave and Wireless Technology Letters, 2024 | | 2024 |
| High Performance N-polar GaN Transistors at W-and D-band E Akso UC Santa Barbara, 2023 | | 2023 |
| Airbridge-Capacitance-Loaded CPW Pre-Matching Networks for N-Polar GaN HEMTs at D-Band E Akso, W Li, M Guidry, B Romanczyk, N Hatui, S Keller, and U K Mishra Lester Eastman Conference, 2021 | | 2021 |
| A Variability Analysis Algorithm for Spiral Inductors Using Enhanced Single-Model E Akso, MB Yelten | | |
| 2023 Index IEEE Microwave and Wireless Technology Letters Vol. 33 PH Aaen, MAY Abdalla, I Abdo, A Abrishamifar, KK Adhikari, S Afroz, ... | | |
Umesh MishraUCSBVerified email at ece.ucsb.edu
