| Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices W Wang, M Wang, E Ambrosi, A Bricalli, M Laudato, Z Sun, X Chen, ... Nature Communications 10 (1), 1-9, 2019 | 252 | 2019 |
| Solving matrix equations in one step with cross-point resistive arrays Z Sun, G Pedretti, E Ambrosi, A Bricalli, W Wang, D Ielmini Proceedings of the National Academy of Sciences 116 (10), 4123-4128, 2019 | 216 | 2019 |
| Logic computing with stateful neural networks of resistive switches Z Sun, E Ambrosi, A Bricalli, D Ielmini Advanced Materials 30 (38), 1802554, 2018 | 139 | 2018 |
| Memristive crossbar arrays for storage and computing applications H Li, S Wang, X Zhang, W Wang, R Yang, Z Sun, W Feng, P Lin, Z Wang, ... Advanced Intelligent Systems 3 (9), 2100017, 2021 | 111 | 2021 |
| One-step regression and classification with cross-point resistive memory arrays Z Sun, G Pedretti, A Bricalli, D Ielmini Science Advances 6 (5), eaay2378, 2020 | 96 | 2020 |
| Characteristics of different types of filaments in resistive switching memories investigated by complex impedance spectroscopy XL Jiang, YG Zhao, YS Chen, D Li, YX Luo, DY Zhao, Z Sun, JR Sun, ... Applied Physics Letters 102 (25), 2013 | 63 | 2013 |
| In-memory PageRank accelerator with a cross-point array of resistive memories Z Sun, E Ambrosi, G Pedretti, A Bricalli, D Ielmini IEEE Transactions on Electron Devices 67 (4), 1466-1470, 2020 | 43 | 2020 |
| Time complexity of in-memory solution of linear systems Z Sun, G Pedretti, P Mannocci, E Ambrosi, A Bricalli, D Ielmini IEEE Transactions on Electron Devices 67 (7), 2945-2951, 2020 | 37 | 2020 |
| Ferroelectricity and self-polarization in ultrathin relaxor ferroelectric films P Miao, Y Zhao, N Luo, D Zhao, A Chen, Z Sun, M Guo, M Zhu, H Zhang, ... Scientific Reports 6 (1), 1-9, 2016 | 37 | 2016 |
| In-memory computing with emerging memory devices: Status and outlook P Mannocci, M Farronato, N Lepri, L Cattaneo, A Glukhov, Z Sun, ... APL Machine Learning 1 (1), 2023 | 30 | 2023 |
| Deterministic role of concentration surplus of cation vacancy over anion vacancy in bipolar memristive NiO Z Sun, Y Zhao, M He, L Gu, C Ma, K Jin, D Zhao, N Luo, Q Zhang, N Wang, ... ACS applied materials & interfaces 8 (18), 11583-11591, 2016 | 27 | 2016 |
| Time complexity of in-memory matrix-vector multiplication Z Sun, R Huang IEEE Transactions on Circuits and Systems II: Express Briefs 68 (8), 2785-2789, 2021 | 22 | 2021 |
| Magnetoresistance behavior of conducting filaments in resistive-switching NiO with different resistance states D Zhao, S Qiao, Y Luo, A Chen, P Zhang, P Zheng, Z Sun, M Guo, ... ACS Applied Materials & Interfaces 9 (12), 10835-10846, 2017 | 22 | 2017 |
| In‐Memory Eigenvector Computation in Time O(1) Z Sun, G Pedretti, E Ambrosi, A Bricalli, D Ielmini Advanced Intelligent Systems 2 (8), 2000042, 2020 | 21 | 2020 |
| A universal, analog, in-memory computing primitive for linear algebra using memristors P Mannocci, G Pedretti, E Giannone, E Melacarne, Z Sun, D Ielmini IEEE Transactions on Circuits and Systems I: Regular Papers 68 (12), 4889-4899, 2021 | 19 | 2021 |
| Redundancy and analog slicing for precise in-memory machine learning—Part I: Programming techniques G Pedretti, P Mannocci, C Li, Z Sun, JP Strachan, D Ielmini IEEE Transactions on Electron Devices 68 (9), 4373-4378, 2021 | 17 | 2021 |
| Fast solution of linear systems with analog resistive switching memory (RRAM) Z Sun, G Pedretti, D Ielmini Proceedings of the 4th IEEE International Conference on Rebooting Computing …, 2019 | 13 | 2019 |
| Optimization schemes for in-memory linear regression circuit with memristor arrays S Wang, Z Sun, Y Liu, S Bao, Y Cai, D Ielmini, R Huang IEEE Transactions on Circuits and Systems I: Regular Papers 68 (12), 4900-4909, 2021 | 12 | 2021 |
| Modeling and Mitigating the Interconnect Resistance Issue in Analog RRAM Matrix Computing Circuits Y Luo, S Wang, P Zuo, Z Sun, R Huang IEEE Transactions on Circuits and Systems I: Regular Papers, 2022 | 9 | 2022 |
| Redundancy and analog slicing for precise in-memory machine learning—Part II: Applications and benchmark G Pedretti, P Mannocci, C Li, Z Sun, JP Strachan, D Ielmini IEEE Transactions on Electron Devices 68 (9), 4379-4383, 2021 | 9 | 2021 |
Daniele IelminiProfessor of ElectronicsVerified email at elet.polimi.it
