A silicon carbide room-temperature single-photon source S Castelletto, BC Johnson, V Ivády, N Stavrias, T Umeda, A Gali, ...
Nature materials 13 (2), 151-156, 2014
412 2014 Properties of nitrogen-vacancy centers in diamond: the group theoretic approach JR Maze, A Gali, E Togan, Y Chu, A Trifonov, E Kaxiras, MD Lukin
New Journal of Physics 13 (2), 025025, 2011
409 2011 Coherent control of single spins in silicon carbide at room temperature M Widmann, SY Lee, T Rendler, NT Son, H Fedder, S Paik, LP Yang, ...
Nature materials 14 (2), 164-168, 2015
402 2015 Ab initio supercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors A Gali, M Fyta, E Kaxiras
Physical Review B 77 (15), 155206, 2008
324 2008 Electronic structure of the silicon vacancy color center in diamond C Hepp, T Müller, V Waselowski, JN Becker, B Pingault, H Sternschulte, ...
Physical Review Letters 112 (3), 036405, 2014
301 2014 Electrically driven single-photon source at room temperature in diamond N Mizuochi, T Makino, H Kato, D Takeuchi, M Ogura, H Okushi, M Nothaft, ...
Nature photonics 6 (5), 299-303, 2012
292 2012 Accurate defect levels obtained from the HSE06 range-separated hybrid functional P Deák, B Aradi, T Frauenheim, E Janzén, A Gali
Physical Review B 81 (15), 153203, 2010
245 2010 Molecular-sized fluorescent nanodiamonds II Vlasov, AA Shiryaev, T Rendler, S Steinert, SY Lee, D Antonov, M Vörös, ...
Nature nanotechnology 9 (1), 54-58, 2014
232 2014 Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures M Heiss, S Conesa-Boj, J Ren, HH Tseng, A Gali, A Rudolph, E Uccelli, ...
Physical Review B 83 (4), 045303, 2011
229 2011 Divacancy in 4H-SiC NT Son, P Carlsson, J Ul Hassan, E Janzén, T Umeda, J Isoya, A Gali, ...
Physical review letters 96 (5), 055501, 2006
209 2006 Optically controlled switching of the charge state of a single nitrogen-vacancy center in diamond at cryogenic temperatures P Siyushev, H Pinto, M Vörös, A Gali, F Jelezko, J Wrachtrup
Physical review letters 110 (16), 167402, 2013
200 2013 Dark states of single nitrogen-vacancy centers in diamond unraveled by single shot NMR G Waldherr, J Beck, M Steiner, P Neumann, A Gali, T Frauenheim, ...
Physical review letters 106 (15), 157601, 2011
189 2011 Defects in JM Knaup, P Deák, T Frauenheim, A Gali, Z Hajnal, WJ Choyke
Physical Review B 72 (11), 115323, 2005
168 2005 Theoretical study of the mechanism of dry oxidation of 4 H-SiC JM Knaup, P Deák, T Frauenheim, A Gali, Z Hajnal, WJ Choyke
Physical Review B 71 (23), 235321, 2005
166 2005 Theory of spin-conserving excitation of the N− V− center in diamond A Gali, E Janzén, P Deák, G Kresse, E Kaxiras
Physical review letters 103 (18), 186404, 2009
165 2009 The mechanism of defect creation and passivation at the SiC/SiO2 interface P Deak, JM Knaup, T Hornos, C Thill, A Gali, T Frauenheim
Journal of Physics D: Applied Physics 40 (20), 6242, 2007
156 2007 Ab initio study of nitrogen and boron substitutional impurities in single-wall SiC nanotubes A Gali
Physical Review B 73 (24), 245415, 2006
156 2006 Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects P Deák, B Aradi, M Kaviani, T Frauenheim, A Gali
Physical Review B 89 (7), 075203, 2014
150 2014 Single-photon emitting diode in silicon carbide A Lohrmann, N Iwamoto, Z Bodrog, S Castelletto, T Ohshima, TJ Karle, ...
Nature communications 6 (1), 1-7, 2015
144 2015 Electrically and mechanically tunable electron spins in silicon carbide color centers AL Falk, PV Klimov, BB Buckley, V Ivády, IA Abrikosov, G Calusine, ...
Physical review letters 112 (18), 187601, 2014
142 2014 
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