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Gokhan Utlu
Gokhan Utlu
Verified email at ege.edu.tr
Title
Cited by
Cited by
Year
The effects of grain boundary scattering on the electrical resistivity of single-layered silver and double-layered silver/chromium thin films
N Artunç, MD Bilge, G Utlu
Surface and Coatings Technology 201 (19-20), 8377-8381, 2007
332007
Structural and electrical characterization of the nickel silicide films formed at 850 C by rapid thermal annealing of the Ni/Si (1 0 0) films
G Utlu, N Artunç, S Budak, S Tari
Applied surface science 256 (16), 5069-5075, 2010
232010
Mechanisms behind slow photoresponse character of Pulsed Electron Deposited ZnO thin films
M Özdoğan, C Çelebi, G Utlu
Materials Science in Semiconductor Processing 107, 104863, 2020
142020
The two-dimensional coordination polymer poly [[bis (3-methylpyridine) cadmium (II)]-tetra-μ-cyano-nickel (II)]
M Aygün, G Utlu, AG Gökçe, S Akyüz, S Özbey
Acta Crystallographica Section C: Crystal Structure Communications 61 (3 …, 2005
142005
The comparison of transient photocurrent spectroscopy measurements of Pulsed Electron Deposited ZnO thin film for air and vacuum ambient conditions
M Özdoğan, S Yiğen, C Çelebi, G Utlu
Thin Solid Films 680, 48-54, 2019
132019
Growth and characterization of ZnO nanostructures on porous silicon substrates: Effect of solution temperature
G Aydemir, G Utlu, A Çetinel
Chemical Physics Letters 737, 136827, 2019
122019
Temperature and thickness dependence of the grain boundary scattering in the Ni–Si silicide films formed on silicon substrate at 500° C by RTA
G Utlu, N Artunc, S Selvi
Materials Chemistry and Physics 132 (2-3), 421-430, 2012
102012
The effects of grain boundary scattering on electrical resistivity of Ag/NiSi silicide films formed on silicon substrate at 500° C by RTA
G Utlu, N Artunc
Applied surface science 310, 248-256, 2014
72014
Preparation and Characterization of Electrochemically Deposited Cu2O/ZnO Heterojunctions on Porous Silicon
A Çetinel, G Utlu
ACS omega 8 (23), 20801-20809, 2023
42023
Structural investigation of ZnO thin films obtained by annealing after thermal evaporation
U Gökhan
Sakarya University Journal of Science 23 (4), 650-656, 2019
42019
The effect of thickness of silver thin film on structural and optical properties of porous silicon
A Cetinel, M Ozdogan, G Utlu, N Artunc, G Sahin, E Tarhan
Surface Review and Letters 24 (06), 1750074, 2017
22017
Thickness and Temperature Dependence of ZnO/Glass Thin Film Systems Obtained by Thermal Evaporation.
Ş KINAL, G Utlu
Acta Physica Polonica, A. 136 (3), 2019
12019
The calculation of the reflection coefficients by analyzing resistivity data of the Ni–Si silicide films formed at 850° C by RTA
G Utlu, N Artunç
Microelectronic engineering 113, 86-92, 2014
12014
INTERESTING RESISTIVITY BEHAVIOR OF THE Ag–Ni–Si SILICIDE FILMS FORMED AT 850° C BY RAPID THERMAL ANNEALING OF THE Ag–Ni/Si FILMS
G Utlu
International Journal of Modern Physics B 25 (28), 3773-3783, 2011
12011
Effect of deposition time on the structural and electrical properties of electrodeposited PSi/Cu2O/ZnO heterojunction
G Utlu, A Çetinel
Chemical Physics Letters 820, 140449, 2023
2023
Structural investigation of the Ag-Ni-Si silicide films formed at 850 degree C by RTA on Si (100) substrates
G Utlu, N Artunc
2010
Effect of Annealing on ZnO Thin Films Deposited by Thermal Evaporation on Si (100) Substrates
G Utlu, S Kinal
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