The effects of grain boundary scattering on the electrical resistivity of single-layered silver and double-layered silver/chromium thin films N Artunç, MD Bilge, G Utlu Surface and Coatings Technology 201 (19-20), 8377-8381, 2007 | 33 | 2007 |
Structural and electrical characterization of the nickel silicide films formed at 850 C by rapid thermal annealing of the Ni/Si (1 0 0) films G Utlu, N Artunç, S Budak, S Tari Applied surface science 256 (16), 5069-5075, 2010 | 23 | 2010 |
Mechanisms behind slow photoresponse character of Pulsed Electron Deposited ZnO thin films M Özdoğan, C Çelebi, G Utlu Materials Science in Semiconductor Processing 107, 104863, 2020 | 14 | 2020 |
The two-dimensional coordination polymer poly [[bis (3-methylpyridine) cadmium (II)]-tetra-μ-cyano-nickel (II)] M Aygün, G Utlu, AG Gökçe, S Akyüz, S Özbey Acta Crystallographica Section C: Crystal Structure Communications 61 (3 …, 2005 | 14 | 2005 |
The comparison of transient photocurrent spectroscopy measurements of Pulsed Electron Deposited ZnO thin film for air and vacuum ambient conditions M Özdoğan, S Yiğen, C Çelebi, G Utlu Thin Solid Films 680, 48-54, 2019 | 13 | 2019 |
Growth and characterization of ZnO nanostructures on porous silicon substrates: Effect of solution temperature G Aydemir, G Utlu, A Çetinel Chemical Physics Letters 737, 136827, 2019 | 12 | 2019 |
Temperature and thickness dependence of the grain boundary scattering in the Ni–Si silicide films formed on silicon substrate at 500° C by RTA G Utlu, N Artunc, S Selvi Materials Chemistry and Physics 132 (2-3), 421-430, 2012 | 10 | 2012 |
The effects of grain boundary scattering on electrical resistivity of Ag/NiSi silicide films formed on silicon substrate at 500° C by RTA G Utlu, N Artunc Applied surface science 310, 248-256, 2014 | 7 | 2014 |
Preparation and Characterization of Electrochemically Deposited Cu2O/ZnO Heterojunctions on Porous Silicon A Çetinel, G Utlu ACS omega 8 (23), 20801-20809, 2023 | 4 | 2023 |
Structural investigation of ZnO thin films obtained by annealing after thermal evaporation U Gökhan Sakarya University Journal of Science 23 (4), 650-656, 2019 | 4 | 2019 |
The effect of thickness of silver thin film on structural and optical properties of porous silicon A Cetinel, M Ozdogan, G Utlu, N Artunc, G Sahin, E Tarhan Surface Review and Letters 24 (06), 1750074, 2017 | 2 | 2017 |
Thickness and Temperature Dependence of ZnO/Glass Thin Film Systems Obtained by Thermal Evaporation. Ş KINAL, G Utlu Acta Physica Polonica, A. 136 (3), 2019 | 1 | 2019 |
The calculation of the reflection coefficients by analyzing resistivity data of the Ni–Si silicide films formed at 850° C by RTA G Utlu, N Artunç Microelectronic engineering 113, 86-92, 2014 | 1 | 2014 |
INTERESTING RESISTIVITY BEHAVIOR OF THE Ag–Ni–Si SILICIDE FILMS FORMED AT 850° C BY RAPID THERMAL ANNEALING OF THE Ag–Ni/Si FILMS G Utlu International Journal of Modern Physics B 25 (28), 3773-3783, 2011 | 1 | 2011 |
Effect of deposition time on the structural and electrical properties of electrodeposited PSi/Cu2O/ZnO heterojunction G Utlu, A Çetinel Chemical Physics Letters 820, 140449, 2023 | | 2023 |
Structural investigation of the Ag-Ni-Si silicide films formed at 850 degree C by RTA on Si (100) substrates G Utlu, N Artunc | | 2010 |
Effect of Annealing on ZnO Thin Films Deposited by Thermal Evaporation on Si (100) Substrates G Utlu, S Kinal | | |