Formation of moiré interlayer excitons in space and time D Schmitt, JP Bange, W Bennecke, AA AlMutairi, G Meneghini, ... Nature 608 (7923), 499-503, 2022 | 94 | 2022 |
Label-Free and Recalibrated Multilayer MoS2 Biosensor for Point-of-Care Diagnostics H Park, G Han, SW Lee, H Lee, SH Jeong, M Naqi, AA AlMutairi, YJ Kim, ... ACS applied materials & interfaces 9 (50), 43490-43497, 2017 | 76 | 2017 |
PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices AA AlMutairi, D Yin, Y Yoon IEEE Electron Device Letters 39 (1), 151-154, 2017 | 50 | 2017 |
On MoS2 Thin-Film Transistor Design Consideration for a NO2 Gas Sensor H Im, AA AlMutairi, S Kim, M Sritharan, S Kim, Y Yoon ACS sensors 4 (11), 2930-2936, 2019 | 29 | 2019 |
In situ studies of germanium-tin and silicon-germanium-tin thermal stability JH Fournier-Lupien, D Chagnon, P Lévesque, AAA AlMutairi, S Wirths, ... ECS Transactions 64 (6), 903, 2014 | 26 | 2014 |
A Wafer‐Scale Nanoporous 2D Active Pixel Image Sensor Matrix with High Uniformity, High Sensitivity, and Rapid Switching H Park, A Sen, M Kaniselvan, AA AlMutairi, A Bala, LP Lee, Y Yoon, S Kim Advanced Materials 35 (14), 2210715, 2023 | 24 | 2023 |
Assessment of high-frequency performance limit of black phosphorus field-effect transistors D Yin, AA AlMutairi, Y Yoon IEEE Transactions on Electron Devices 64 (7), 2984-2991, 2017 | 24 | 2017 |
Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors H Park, J Lee, G Han, AA AlMutairi, YH Kim, J Lee, YM Kim, YJ Kim, ... Communications Materials 2 (1), 94, 2021 | 20 | 2021 |
Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware D Joksas, AA AlMutairi, O Lee, M Cubukcu, A Lombardo, H Kurebayashi, ... Advanced Intelligent Systems 4 (8), 2200068, 2022 | 16 | 2022 |
Assessment of germanane field-effect transistors for CMOS technology Y Zhao, AA AlMutairi, Y Yoon IEEE Electron Device Letters 38 (12), 1743-1746, 2017 | 16 | 2017 |
Performance limit projection of germanane field-effect transistors AA AlMutairi, Y Zhao, D Yin, Y Yoon IEEE Electron Device Letters 38 (5), 673-676, 2017 | 14 | 2017 |
High-responsivity reduced graphene oxide gel photodetectors for visible-light detection with a large detection area and an end-contact interface D Alsaedi, M Irannejad, KH Ibrahim, A Almutairi, O Ramahi, M Yavuz Journal of Materials Chemistry C 5 (4), 882-888, 2017 | 14 | 2017 |
Ultrafast dynamics of bright and dark excitons in monolayer WSe2 and heterobilayer WSe2/MoS2 JP Bange, P Werner, D Schmitt, W Bennecke, G Meneghini, AA AlMutairi, ... 2D Materials 10 (3), 035039, 2023 | 7 | 2023 |
Device Performance Assessment of Monolayer HfSe2: A New Layered Material Compatible With High-HfO2 AA AlMutairi, Y Yoon IEEE Electron Device Letters 39 (11), 1772-1775, 2018 | 6 | 2018 |
High operation stability and different sensing mechanisms in graphene oxide gel photodetectors utilizing a thin polymeric layer D Alsaedi, M Irannejad, K Ibrahim, AA AlMutairi, K Musselman, ... ACS Applied Electronic Materials 2 (5), 1203-1209, 2020 | 3 | 2020 |
Ultrafast nano-imaging of dark excitons D Schmitt, JP Bange, W Bennecke, G Meneghini, AA AlMutairi, ... arXiv preprint arXiv:2305.18908, 2023 | 2 | 2023 |
Probing correlations in the exciton landscape of a moir\'e heterostructure JP Bange, D Schmitt, W Bennecke, G Meneghini, AA AlMutairi, ... arXiv preprint arXiv:2303.17886, 2023 | 2 | 2023 |
Probing electron-hole Coulomb correlations in the exciton landscape of a twisted semiconductor heterostructure JP Bange, D Schmitt, W Bennecke, G Meneghini, AA AlMutairi, ... Science Advances 10 (6), eadi1323, 2024 | 1 | 2024 |
Memristors, Spintronics and 2D Materials for Future Computing Systems D Joksas, A AlMutairi, O Lee, M Cubukcu, A Lombardo, H Kurebayashi, ... arXiv preprint arXiv:2203.06147, 2022 | 1 | 2022 |
Controlled Fabrication of Native Ultra-Thin Amorphous Gallium Oxide from 2D Gallium Sulfide for Emerging Electronic Applications AA AlMutairi, A Xhameni, X Guo, I Chircă, V Nicolosi, S Hofmann, ... arXiv preprint arXiv:2405.05632, 2024 | | 2024 |