| Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics E Singh, P Singh, KS Kim, GY Yeom, HS Nalwa ACS applied materials & interfaces 11 (12), 11061-11105, 2019 | 328 | 2019 |
| Atomically Thin-Layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells E Singh, KS Kim, GY Yeom, HS Nalwa ACS applied materials & interfaces 9 (4), 3223-3245, 2017 | 258 | 2017 |
| Two-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cells E Singh, KS Kim, GY Yeom, HS Nalwa RSC advances 7 (45), 28234-28290, 2017 | 195 | 2017 |
| Vertical full-colour micro-LEDs via 2D materials-based layer transfer J Shin, H Kim, S Sundaram, J Jeong, BI Park, CS Chang, J Choi, T Kim, ... Nature 614 (7946), 81-87, 2023 | 98 | 2023 |
| Atomic Layer Etching Mechanism of MoS2 for Nanodevices KS Kim, KH Kim, Y Nam, J Jeon, S Yim, E Singh, JY Lee, SJ Lee, YS Jung, ... ACS Applied Materials & Interfaces 9 (13), 11967-11976, 2017 | 98 | 2017 |
| An Optogenetics‐Inspired Flexible van der Waals Optoelectronic Synapse and its Application to a Convolutional Neural Network S Seo, JJ Lee, RG Lee, TH Kim, S Park, S Jung, HK Lee, M Andreev, ... Advanced Materials 33 (40), 2102980, 2021 | 86 | 2021 |
| Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction KS Kim, YJ Ji, KH Kim, S Choi, DH Kang, K Heo, S Cho, S Yim, S Lee, ... Nature communications 10 (1), 4701, 2019 | 76 | 2019 |
| Wafer‐Scale and Low‐Temperature Growth of 1T‐WS2 Film for Efficient and Stable Hydrogen Evolution Reaction HU Kim, V Kanade, M Kim, KS Kim, BS An, H Seok, H Yoo, LE Chaney, ... Small 16 (6), 1905000, 2020 | 72 | 2020 |
| Impact of 2D–3D heterointerface on remote epitaxial interaction through graphene H Kim, K Lu, Y Liu, HS Kum, KS Kim, K Qiao, SH Bae, S Lee, YJ Ji, ... ACS nano 15 (6), 10587-10596, 2021 | 67 | 2021 |
| Non-epitaxial single-crystal 2D material growth by geometric confinement KS Kim, D Lee, CS Chang, S Seo, Y Hu, S Cha, H Kim, J Shin, JH Lee, ... Nature 614 (7946), 88-94, 2023 | 64 | 2023 |
| Low-temperature wafer-scale growth of MoS2-graphene heterostructures HU Kim, M Kim, Y Jin, Y Hyeon, KS Kim, BS An, CW Yang, V Kanade, ... Applied Surface Science 470, 129-134, 2019 | 52 | 2019 |
| Atomic layer etching of graphene through controlled ion beam for graphene-based electronics KS Kim, YJ Ji, Y Nam, KH Kim, E Singh, JY Lee, GY Yeom Scientific reports 7 (1), 2462, 2017 | 45 | 2017 |
| Cyclic chlorine trap-doping for transparent, conductive, thermally stable and damage-free graphene VP Pham, KN Kim, MH Jeon, KS Kim, GY Yeom Nanoscale 6 (24), 15301-15308, 2014 | 41 | 2014 |
| Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction H Kim, S Lee, J Shin, M Zhu, M Akl, K Lu, NM Han, Y Baek, CS Chang, ... Nature Nanotechnology 17 (10), 1054-1059, 2022 | 38 | 2022 |
| Double negative differential resistance device based on Hafnium Disulfide/Pentacene hybrid structure KS Jung, K Heo, MJ Kim, M Andreev, S Seo, JO Kim, JH Lim, KH Kim, ... Advanced Science 7 (19), 2000991, 2020 | 32 | 2020 |
| Silicon nitride deposition for flexible organic electronic devices by VHF (162 MHz)-PECVD using a multi-tile push-pull plasma source KS Kim, KH Kim, YJ Ji, JW Park, JH Shin, AR Ellingboe, GY Yeom Scientific reports 7 (1), 13585, 2017 | 32 | 2017 |
| Effect of large work function modulation of MoS 2 by controllable chlorine doping using a remote plasma KH Kim, KS Kim, YJ Ji, I Moon, K Heo, DH Kang, KN Kim, WJ Yoo, ... Journal of Materials Chemistry C 8 (5), 1846-1851, 2020 | 28 | 2020 |
| Hierarchical nanostructures of nitrogen-doped molybdenum sulphide for supercapacitors C Kanade, S Arbuj, K Kanade, KS Kim, GY Yeom, T Kim, B Kale RSC advances 8 (69), 39749-39755, 2018 | 25 | 2018 |
| Highly uniform wafer-scale synthesis of α-MoO3 by plasma enhanced chemical vapor deposition HU Kim, J Son, A Kulkarni, C Ahn, KS Kim, D Shin, GY Yeom, T Kim Nanotechnology 28 (17), 175601, 2017 | 25 | 2017 |
| Characteristics of silicon nitride deposited by VHF (162 MHz)-plasma enhanced chemical vapor deposition using a multi-tile push–pull plasma source KS Kim, N Sirse, KH Kim, AR Ellingboe, KN Kim, GY Yeom Journal of Physics D: Applied Physics 49 (39), 395201, 2016 | 24 | 2016 |
