Takip et
Vladimir Volynets
Vladimir Volynets
Principal engineer, Samsung Electronics
samsung.com üzerinde doğrulanmış e-posta adresine sahip
Başlık
Alıntı yapanlar
Alıntı yapanlar
Yıl
Plasma based ion implantation system
Y dong Lee, Y Tolmachev, V Volynets, V Pashkovskiy, A Ushakov, ...
US Patent App. 12/153,703, 2008
472008
Experimental and theoretical study of the CF4 DC glow discharge positive column
VN Volynets, AV Lukyanova, AT Rakhimov, DI Slovetsky, NV Suetin
Journal of Physics D: Applied Physics 26 (4), 647, 1993
421993
Effect on plasma and etch-rate uniformity of controlled phase shift between rf voltages applied to powered electrodes in a triode capacitively coupled plasma reactor
D Sung, S Jeong, Y Park, VN Volynets, AG Ushakov, GH Kim
Journal of Vacuum Science & Technology A 27 (1), 13-19, 2009
332009
Experimental study of spatial nonuniformities in 100MHz capacitively coupled plasma using optical probe
VN Volynets, AG Ushakov, D Sung, YN Tolmachev, VG Pashkovsky, ...
Journal of Vacuum Science & Technology A 26 (3), 406-415, 2008
302008
Insights to scaling remote plasma sources sustained in NF3 mixtures
S Huang, V Volynets, JR Hamilton, S Lee, IC Song, S Lu, J Tennyson, ...
Journal of Vacuum Science & Technology A 35 (3), 2017
292017
Experimental study of plasma non-uniformities and the effect of phase-shift control in a very high frequency capacitive discharge
V Volynets, H Shin, D Kang, D Sung
Journal of Physics D: Applied Physics 43 (8), 085203, 2010
292010
The influence of anisotropy and non-locality of the electron distribution function as well as non-equilibrium ion diffusion on the electrodynamics of DC discharge at low pressure
VA Feoktistov, VV Ivanov, AM Popov, AT Rakhimov, TV Rakhimova, ...
Journal of Physics D: Applied Physics 30 (3), 423, 1997
281997
Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. I. Plasma source and critical fluxes
V Volynets, Y Barsukov, G Kim, JE Jung, SK Nam, K Han, S Huang, ...
Journal of Vacuum Science & Technology A 38 (2), 2020
242020
Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O2 mixtures
S Huang, V Volynets, JR Hamilton, SK Nam, IC Song, S Lu, J Tennyson, ...
Journal of Vacuum Science & Technology A 36 (2), 2018
232018
Frequency and electrode shape effects on etch rate uniformity in a dual-frequency capacitive reactor
D Sung, V Volynets, W Hwang, Y Sung, S Lee, M Choi, GH Kim
Journal of Vacuum Science & Technology A 30 (6), 2012
222012
Plasma uniformity and phase-controlled etching in a very high frequency capacitive discharge
D Sung, J Woo, K Lim, K Kim, V Volynets, GH Kim
Journal of Applied Physics 106 (2), 2009
222009
Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation
Y Barsukov, V Volynets, S Lee, G Kim, B Lee, SK Nam, K Han
Journal of Vacuum Science & Technology A 35 (6), 2017
202017
Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. II. Surface reaction mechanism
JE Jung, Y Barsukov, V Volynets, G Kim, SK Nam, K Han, S Huang, ...
Journal of Vacuum Science & Technology A 38 (2), 2020
182020
Spatial variation of plasma parameters and ion acceleration in an inductive plasma system
VN Volynets, W Park, YN Tolmachev, VG Pashkovsky, J Yoo
Journal of applied physics 99 (4), 2006
162006
Plasma based ion implantation apparatus
Y dong Lee, Y Tolmachev, V Volynets, V Pashkovskiy
US Patent App. 11/603,100, 2008
152008
Ion analysis system based on analyzer of ion energy distribution using retarded electric field
YH Lee, A Ushakov, Y Tolmachev, V Volynets, WC Pak, V Pashkovskiy
US Patent App. 11/751,812, 2008
142008
Highly selective Si3N4/SiO2 etching using an NF3
V Volynets, Y Barsukov, G Kim, JE Jung, SK Nam, K Han, S Huang, ...
N2, 2020
132020
Electromagnetic accelerator having nozzle part
WT Park, J Yoo, V Volynets
US Patent App. 11/281,356, 2006
112006
Driving frequency modulation system and method for plasma accelerator
WT Park, V Volynets
US Patent 7,309,961, 2007
102007
Study of fluorocarbon plasma in 60 and 100MHz capacitively coupled discharges using mass spectrometry
A Ushakov, V Volynets, S Jeong, D Sung, Y Ihm, J Woo, M Han
Journal of Vacuum Science & Technology A 26 (5), 1198-1207, 2008
92008
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Makaleler 1–20