Matthew Jerry
Matthew Jerry
University of Notre Dame / Pennsylvania State University
Verified email at
Cited by
Cited by
Observation of the nonlocal spin-orbital effective field
X Fan, J Wu, Y Chen, MJ Jerry, H Zhang, JQ Xiao
Nature communications 4 (1), 1-7, 2013
Ferroelectric FET analog synapse for acceleration of deep neural network training
M Jerry, PY Chen, J Zhang, P Sharma, K Ni, S Yu, S Datta
2017 IEEE International Electron Devices Meeting (IEDM), 6.2. 1-6.2. 4, 2017
Critical Role of Interlayer in Hf0.5Zr0.5O2Ferroelectric FET Nonvolatile Memory Performance
K Ni, P Sharma, J Zhang, M Jerry, JA Smith, K Tapily, R Clark, ...
IEEE Transactions on Electron Devices 65 (6), 2461-2469, 2018
Vertex coloring of graphs via phase dynamics of coupled oscillatory networks
A Parihar, N Shukla, M Jerry, S Datta, A Raychowdhury
Scientific reports 7 (1), 1-11, 2017
A circuit compatible accurate compact model for ferroelectric-FETs
K Ni, M Jerry, JA Smith, S Datta
2018 IEEE Symposium on VLSI Technology, 131-132, 2018
A ferroelectric field effect transistor based synaptic weight cell
M Jerry, S Dutta, A Kazemi, K Ni, J Zhang, PY Chen, P Sharma, S Yu, ...
Journal of Physics D: Applied Physics 51 (43), 434001, 2018
Computing with ferroelectric FETs: Devices, models, systems, and applications
A Aziz, ET Breyer, A Chen, X Chen, S Datta, SK Gupta, M Hoffmann, ...
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2018
Quantitative Mapping of Phase Coexistence in Mott-Peierls Insulator during Electronic and Thermally Driven Phase Transition
SD H Madan , M Jerry , A Pogrebnyakov , T Mayer
ACS Nano, 2015
Ag/HfO2based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs
N Shukla, B Grisafe, RK Ghosh, N Jao, A Aziz, J Frougier, M Jerry, ...
2016 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2016
26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer
H Madan, HT Zhang, M Jerry, D Mukherjee, N Alem, R Engel-Herbert, ...
2015 IEEE International Electron Devices Meeting (IEDM), 9.3. 1-9.3. 4, 2015
Phase-transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced ON current
J Frougier, N Shukla, D Deng, M Jerry, A Aziz, L Liu, G Lavallee, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
Computing with networks of oscillatory dynamical systems
A Raychowdhury, A Parihar, GH Smith, V Narayanan, G Csaba, M Jerry, ...
Proceedings of the IEEE 107 (1), 73-89, 2018
Write disturb in ferroelectric FETs and its implication for 1T-FeFET AND memory arrays
K Ni, X Li, JA Smith, M Jerry, S Datta
IEEE Electron Device Letters 39 (11), 1656-1659, 2018
Enabling new computation paradigms with HyperFET-an emerging device
WY Tsai, X Li, M Jerry, B Xie, N Shukla, H Liu, N Chandramoorthy, ...
IEEE Transactions on Multi-Scale Computing Systems 2 (1), 30-48, 2016
Ultra-low power probabilistic IMT neurons for stochastic sampling machines
M Jerry, A Parihar, B Grisafe, A Raychowdhury, S Datta
VLSI Technology, 2017 IEEE Symposium on, T186-T187, 2017
Phase transition oxide neuron for spiking neural networks
M Jerry, W Tsai, B Xie, X Li, V Narayanan, A Raychowdhury, S Datta
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
Stochastic IMT (insulator-metal-transition) neurons: an interplay of thermal and threshold noise at bifurcation
A Parihar, M Jerry, S Datta, A Raychowdhury
Frontiers in neuroscience 12, 210, 2018
Programmable coupled oscillators for synchronized locomotion
S Dutta, A Parihar, A Khanna, J Gomez, W Chakraborty, M Jerry, B Grisafe, ...
Nature communications 10 (1), 1-10, 2019
In-memory computing primitive for sensor data fusion in 28 nm HKMG FeFET technology
K Ni, B Grisafe, W Chakraborty, AK Saha, S Dutta, M Jerry, JA Smith, ...
2018 IEEE International Electron Devices Meeting (IEDM), 16.1. 1-16.1. 4, 2018
Dynamics of electrically driven sub-nanosecond switching in Vanadium dioxide
M Jerry, N Shukla, H Paik, DG Schlom, S Datta
Silicon Nanoelectronics Workshop, 2016
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