Roman Engel-Herbert
Roman Engel-Herbert
Assoc. Professor of Materials Science and Engineering, Chemistry and Physics, The Pennsylvania State
Verified email at psu.edu - Homepage
Title
Cited by
Cited by
Year
The ReaxFF reactive force-field: development, applications and future directions
TP Senftle, S Hong, MM Islam, SB Kylasa, Y Zheng, YK Shin, ...
npj Computational Materials 2 (1), 1-14, 2016
5872016
Epitaxial SrTiO 3 films with electron mobilities exceeding 30,000 cm 2 V− 1 s− 1
J Son, P Moetakef, B Jalan, O Bierwagen, NJ Wright, R Engel-Herbert, ...
Nature materials 9 (6), 482-484, 2010
3552010
Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
R Engel-Herbert, Y Hwang, S Stemmer
Journal of applied physics 108 (12), 124101, 2010
3442010
A steep-slope transistor based on abrupt electronic phase transition
N Shukla, AV Thathachary, A Agrawal, H Paik, A Aziz, DG Schlom, ...
Nature communications 6 (1), 1-6, 2015
1962015
Calculation of the magnetic stray field of a uniaxial magnetic domain
R Engel-Herbert, T Hesjedal
Journal of Applied Physics 97 (7), 074504, 2005
1752005
Correlated metals as transparent conductors
L Zhang, Y Zhou, L Guo, W Zhao, A Barnes, HT Zhang, C Eaton, Y Zheng, ...
Nature materials 15 (2), 204-210, 2016
1682016
Growth of high-quality films using a hybrid molecular beam epitaxy approach
B Jalan, R Engel-Herbert, NJ Wright, S Stemmer
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27 (3 …, 2009
1542009
Growth of high-quality films using a hybrid molecular beam epitaxy approach
B Jalan, R Engel-Herbert, NJ Wright, S Stemmer
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27 (3 …, 2009
1542009
Synchronized charge oscillations in correlated electron systems
N Shukla, A Parihar, E Freeman, H Paik, G Stone, V Narayanan, H Wen, ...
Scientific reports 4, 4964, 2014
1412014
Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications
DK Mohata, R Bijesh, S Mujumdar, C Eaton, R Engel-Herbert, T Mayer, ...
2011 International Electron Devices Meeting, 33.5. 1-33.5. 4, 2011
1202011
Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
V Chobpattana, J Son, JJM Law, R Engel-Herbert, CY Huang, S Stemmer
Applied Physics Letters 102 (2), 022907, 2013
902013
Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
V Chobpattana, J Son, JJM Law, R Engel-Herbert, CY Huang, S Stemmer
Applied Physics Letters 102 (2), 022907, 2013
902013
Highly conductive SrVO3 as a bottom electrode for functional perovskite oxides
JA Moyer, C Eaton, R Engel‐Herbert
Advanced Materials 25 (26), 3578-3582, 2013
882013
Wafer-scale growth of VO 2 thin films using a combinatorial approach
HT Zhang, L Zhang, D Mukherjee, YX Zheng, RC Haislmaier, N Alem, ...
Nature communications 6 (1), 1-8, 2015
832015
Analysis of trap state densities at interfaces
Y Hwang, R Engel-Herbert, NG Rudawski, S Stemmer
Applied Physics Letters 96 (10), 102910, 2010
802010
Transport properties of ultra-thin VO2 films on (001) TiO2 grown by reactive molecular-beam epitaxy
H Paik, JA Moyer, T Spila, JW Tashman, JA Mundy, E Freeman, N Shukla, ...
Applied physics letters 107 (16), 163101, 2015
592015
Quantification of trap densities at dielectric/III–V semiconductor interfaces
R Engel-Herbert, Y Hwang, S Stemmer
Applied Physics Letters 97 (6), 062905, 2010
542010
Effect of postdeposition anneals on the Fermi level response of gate stacks
Y Hwang, R Engel-Herbert, NG Rudawski, S Stemmer
Journal of Applied Physics 108 (3), 034111, 2010
512010
Effects of hydrogen anneals on oxygen deficient single crystals
B Jalan, R Engel-Herbert, TE Mates, S Stemmer
Applied Physics Letters 93 (5), 052907, 2008
482008
Metal-oxide-semiconductor capacitors with dielectrics grown on by chemical beam deposition
R Engel-Herbert, Y Hwang, J Cagnon, S Stemmer
Applied Physics Letters 95 (6), 062908, 2009
462009
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Articles 1–20