Jeong-Gil Kim
Jeong-Gil Kim
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AlGaN/GaN heterostructure pH sensor with multi-sensing segments
Y Dong, D Son, Q Dai, JH Lee, CH Won, JG Kim, SH Kang, JH Lee, ...
Sensors and Actuators B: Chemical 260, 134-139, 2018
High breakdown voltage and low-current dispersion in AlGaN/GaN HEMTs with high-quality AlN buffer layer
JG Kim, C Cho, E Kim, JS Hwang, KH Park, JH Lee
IEEE Transactions on Electron Devices 68 (4), 1513-1517, 2021
High Figure-of-Merit ( / ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier
JH Lee, JM Ju, G Atmaca, JG Kim, SH Kang, YS Lee, SH Lee, JW Lim, ...
IEEE Journal of the Electron Devices Society 6, 1179-1186, 2018
Effects of interface traps and self-heating on the performance of GAA GaN vertical nanowire MOSFET
T Thingujam, DH Son, JG Kim, S Cristoloveanu, JH Lee
IEEE Transactions on Electron Devices 67 (3), 816-821, 2020
High sensitive pH sensor based on AlInN/GaN heterostructure transistor
Y Dong, DH Son, Q Dai, JH Lee, CH Won, JG Kim, D Chen, JH Lee, H Lu, ...
Sensors 18 (5), 1314, 2018
Deep sub-60 mV/decade subthreshold swing in AlGaN/GaN FinMISHFETs with M-plane sidewall channel
Q Dai, DH Son, YJ Yoon, JG Kim, X Jin, IM Kang, DH Kim, Y Xu, ...
IEEE Transactions on Electron Devices 66 (4), 1699-1703, 2019
Anomalous DC characteristics of AlGaN/GaN HEMTs depending on proton irradiation energies
DS Kim, JH Lee, JG Kim, YJ Yoon, JS Lee, JH Lee
ECS Journal of Solid State Science and Technology 9 (6), 065005, 2020
Growth of AlGaN/GaN heterostructure with lattice-matched AlIn (Ga) N back barrier
JG Kim, SH Kang, Ł Janicki, JH Lee, JM Ju, KW Kim, YS Lee, SH Lee, ...
Solid-State Electronics 152, 24-28, 2019
Effect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs
JH Lee, DS Kim, JG Kim, WH Ahn, Y Bae, JH Lee
Radiation Physics and Chemistry 184, 109473, 2021
AlInGaN/GaN double-channel FinFET with high on-current and negligible current collapse
JH Lee, JG Kim, JM Ju, WH Ahn, SH Kang, JH Lee
Solid-State Electronics 164, 107678, 2020
Enhanced stability and sensitivity of AlGaN/GaN-HEMTs pH sensor by reference device
Y Dong, R Wang, Z Xie, Y Liu, J Lei, H Guo, Q Dai, JG Kim, SH Kang, ...
IEEE Sensors Journal 21 (8), 9771-9776, 2020
Effects of contact potential and sidewall surface plane on the performance of GaN vertical nanowire MOSFETs for low-voltage operation
DH Son, T Thingujam, JG Kim, DH Kim, IM Kang, KS Im, C Theodorou, ...
IEEE transactions on electron devices 67 (4), 1547-1552, 2020
Investigation of proton irradiation-enhanced device performances in AlGaN/GaN HEMTs
JG Kim, E Kim, DS Kim, C Cho, JH Lee
IEEE Journal of the Electron Devices Society 10, 19-22, 2021
Fabrication and characterization of GaN-based nanostructure field effect transistors
DH Son, T Thingujam, Q Dai, JG Kim, S Cristoloveanu, JH Lee
Solid-State Electronics 184, 108079, 2021
Mechanism of Proton-Induced electrical degradation of AlGaN/GaN high electron mobility transistors
DS Kim, JG Kim, JH Lee, YS Hwang, YJ Yoon, JS Lee, Y Bae, JH Lee
Solid-State Electronics 175, 107957, 2021
Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
KS Im, JG Kim, S Vodapally, R Caulmilone, S Cristoloveanu, JH Lee
Microelectronic Engineering 178, 217-220, 2017
Growth of AlN/GaN HEMT structure using Indium-surfactant
JG Kim, CH Won, DK Kim, YW Jo, JH Lee, YT Kim, S Cristoloveanu, ...
JSTS: Journal of Semiconductor Technology and Science 15 (5), 490-496, 2015
Suppression of current dispersion in AlGaN/GaN MISHFETs with in-situ AlN passivation layer
JH Lee, JG Kim, HS Kang, JH Lee
Solid-State Electronics 178, 107984, 2021
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
JG Kim, JH Lee, DM Kang, JH Lee
Micromachines 14 (6), 1227, 2023
Comparison of GaN-based Betavoltaics Fabricated on Different Epitaxial Structures
DS Kim, YS Hwang, J Suk, JS Lee, JH Lee, JG Kim, HS Lee, JH Lee
Transactions on the Korean Nuclear Society Spring Meeting, 2019
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