Optical properties of modified epoxy resin with various oxime derivatives in the UV‐VIS spectral region H Durmus, H Safak, HZ Akbas, G Ahmetli Journal of applied polymer science 120 (3), 1490-1495, 2011 | 31 | 2011 |
On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60–400 K H Durmuş, M Yıldırım, Ş Altındal Journal of Materials Science: Materials in Electronics 30, 9029-9037, 2019 | 22 | 2019 |
Extraction of voltage-dependent series resistance from IV characteristics of Schottky diodes H Durmuş, Ü Atav Applied Physics Letters 99 (9), 2011 | 22 | 2011 |
Analysis of current-voltage-temperature and capacitance-voltage-temperature characteristics of Re/n-Si Schottky contacts H Durmuş, HŞ Kılıç, SY Gezgin, Ş Karataş Silicon 10, 361-369, 2018 | 17 | 2018 |
The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature H Durmuş, Ş Karataş International Journal of Electronics 106 (4), 507-520, 2019 | 14 | 2019 |
Determination of optical constant of materials by two different methods: An application to single crystals Si H DURMUŞ, H ŞAFAK, H Karabiyik Turkish Journal of Physics 24 (6), 725-735, 2000 | 14 | 2000 |
The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes H Durmuş, A Tataroğlu, Ş Altındal, M Yıldırım Current Applied Physics 44, 85-89, 2022 | 13 | 2022 |
Dielectric properties of cured epoxy with teta HZ AKBAŞ, H DURMUŞ, G Ahmetli space 2 (2), 12, 2009 | 13 | 2009 |
Current–voltage analysis of a-Si: H Schottky diodes M Şahin, H Durmuş, R Kaplan Applied surface science 252 (18), 6269-6274, 2006 | 12 | 2006 |
YENİ BİR PULS LASER DEPOZİSYON (PLD) SİSTEMİ TASARIMI, ÜRETİMİ VE UYGULAMALARI HŞ Kiliç, H Durmuş Selçuk-Teknik Dergisi 15 (1), 24-43, 2016 | 11 | 2016 |
Activation energy of polarization due to electrical conductivity and dipole rotation in purified ca-bentonite H Küçükçelebi, H Durmuş, A Deryal, M Taşer, N Karakaya Applied clay science 62, 70-79, 2012 | 9 | 2012 |
Identifying of series resistance and interface states on rhenium/n-GaAs structures using C–V–T and G/ω–V–T characteristics in frequency ranged 50 kHz to … O Çiçek, H Durmuş, Ş Altındal Journal of Materials Science: Materials in Electronics 31, 704-713, 2020 | 7 | 2020 |
Femtosaniye laser Z-Scan tekniği ile malzemelerin Nonlineer optik karakterizasyonu HŞ KILIÇ, Y GÜNDOĞDU, A KEPCEOĞLU, H DURMUŞ Selcuk University Journal of Engineering Sciences 15 (2), 44-59, 2016 | 6 | 2016 |
A mass spectrometric investigation of isomers of butane T Yılmaz Alıç, HŞ Kılıç, H Durmuş, M Doğan, KWD Ledingham Rapid Communications in Mass Spectrometry 26 (8), 893-905, 2012 | 6 | 2012 |
Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti: DLC interlayer EE Tanrıkulu, Ö Berkün, M Ulusoy, B Avar, H Durmuş, Ş Altındal Materials Today Communications 38, 107992, 2024 | 4 | 2024 |
Montmorillonit Türü Kil Minerallerinde Nemin ve Sıcaklığın Dielektrik Durulma Süreçlerine Etkisi H DURMUŞ, H KÜÇÜKÇELEBİ, A GÜLEÇ, A DERYAL, N KARAKAYA, ... Selçuk Üniversitesi Fen Fakültesi Fen Dergisi 2 (32), 71-80, 2008 | 2 | 2008 |
Epoksi Reçinesi ve Epoksi Tabanlı Furfuraldoksim Kompozitinin Dielektrik ve Elektriksel Özellikleri H AKBAŞ, H DURMUŞ, G AHMETLİ Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi 13 (2), 108-112, 2014 | 1 | 2014 |
Silikon ve Germanyum’un Yasak Enerji Band Aralıklarının Düşük Sıcaklık Ölçümü ile Belirlenmesi M Yıldırım, H Durmuş Selçuk Üniversitesi Fen Fakültesi Fen Dergisi 2 (30), 93-96, 2007 | 1 | 2007 |
High-temperature sensitivity complex dielectric/electric modulus, loss tangent, and AC conductivity in Au/(S: DLC)/p-Si (MIS) structures A Tataroglu, H Durmuş, AF Vahid, B Avar, Ş Altındal Journal of Materials Science: Materials in Electronics 35 (3), 1-11, 2024 | | 2024 |
Calculating the parameters of a Schottky diode using forward bias I–V data: an alternative approach H DURMUŞ, Ü ATAV Bulletin of Materials Science 46 (3), 171, 2023 | | 2023 |